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Shape-controllable Preparation Of VIA Group Semiconductor Via γ-Irradiation Route

Posted on:2007-08-28Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y HuFull Text:PDF
GTID:1118360185451449Subject:Inorganic Chemistry
Abstract/Summary:PDF Full Text Request
In the preparation of semiconductor structural materials, γ-ray irradiation route is one kind of approach that has unique characteristic in synthesis technique. In this dissertation, semiconductor sulfides (selenides) three-dimension (3D) hollow structures and hollow spheres, sulfides (oxide) 1D nanostructures, binary and ternary sulfide nanospheres have been successfully prepared through γ-irradiation route at room temperature and under ambient pressure with very skillful experimental design. The possible formation mechanisms were proposed, and some factors affecting the formation of nanomaterials and structures were studied. This is a profitable probe and attempt on new studying systems for Radiation Chemistry and related important results enrich basic theories of Radiation Chemistry. It's hoped to provide significant reference and guide for the related preparation of other materinals in the future. The details about our job are summarized as follows:1. Cadmium selenide hollow structures (with 25~180nm in pore diameter, 37nm in wall thickness) had been successfully got in one-step by γ-irradiating PVP polymer solution system at room temperature. Nickel sulfide and lead sulfide uniform hollow spheres (500nm in diameter and 200nm in thickness of sphere shell) had been successfully synthesized by γ-irradiating PMMA-CS2-ethanol-M2+ (M2+=Ni2+, Pb2+) systems. The influences on the size and morphology of the products were also studied. The successful preparation of hollow spheres in large scale under mild conditions could be of interest for both applications and fundamental studies.
Keywords/Search Tags:Shape-controllable
PDF Full Text Request
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