Organic - Metal Composite Optical Storage Medium And Shape Controllable Cuscn Particle Research

This thesis is composed of two parts as follows:Composite film based on organic-metal structure as optical storage mediumA novel composite film based on an organic-metal structure is employed and researched, which is composed of organic layer and silver layer of nanoscale thickness. This composite film is found to be used as optical storage medium. The influence of many factors is discussed, such as different organic molecules, the aluminum reflection layer, thickness of the silver layer, the power of the laser source and laser action time.The laser recording dots are observed through SEM, the morphology of the spot area changes dramatically, and this change leads to the change of optical character. Uv-vis and XPS are applied to study the Ag layer, Ag layer of thickness less than10nm is found to be in the form of nanoparticles. The interaction between Ag layer and the organic layer is discovered through Uv-vis as well, this kind of interactions is found to be responsible for the formation of the laser recording dots.Prospect of this film based on organic-metal structure for optical storage is previewed, which is meaningful for further research.CuSCN particle material created through solid-liquid interface reaction and the electrical memory device based on the materialA new alcohol system is applied to prepare cuprous thiocyanate (CuSCN) particle film. Through the solid-liquid interface reaction bttween copper layer and potassium thiocyanate (KSCN) solution, CuSCN film composed of particles in uncommon shapes is achieved. By changing parameters as solvent and temperature during reaction, the shapes of CuSCN particles can be controlled. When applying ethanol solvent, and20℃during reaction, uniform CuSCN particles in the shape of truncated cone can be achievedElectrical memory devices based on the CuSCN film is prepared as well. By evaporating metal electrodes sandwiching the CuSCN film, write-once-read-many times (WORM) devices can be achieved. The electric properties of the memory devices are measured, such as yield, on-off ratio, and threshold voltage distribution. By controlling the thickness of the Cu film, electrical memory devices with good yield and a narrow threshold voltage distribution can be achieved.