Fabrication Technique Of Er-doped Al₂O₃ Films, Theoretical And Experimental Investigation On Gain Characteristics Of Waveguides

Erbium-doped waveguide amplifiers(EDWA) have an important influence not only on the development of the All Optical Net(AON), but also on the research of Optics-Electronics Integrate Circuit(OEIC).In this thesis, fabrication techniques of Al₂O₃ films and silicate glass with Er dopant or Yb:Er co-dopant were explored. The gain characteristics of Er-doped or Yb:Er co-doped Al₂O₃ waveguide amplifiers were theoretically and experimentally investigated. The main works are outlined as follows:1. The relationship among the net gain of the rib Er-doped Al₂O₃ waveguide amplifiers and concentrations, lengths, pump power and signal power was numerically simulated by using of the Finite Element Method, the rate equations and the transmission equations. The results will be of powerful help for optimum design of active waveguide devices. At the same time, the effect on the net gain of EDWAs by side-scuplture was also discussed.2. The net gain characteristics of multi-stages rib Al₂O₃ EDWAs in series were firstly analyzed. In series system, there must be the net gain loss of the first kind and there may be the net gain loss of the second kind. The net gain loss has relation to Er-doped concentration and input signal power. The higher Er-doped concentration is, the severer the net gain loss is. The stronger the signal power is, the severer the net gain loss is.3. The Er-doped or Yb:Er co-doped Al₂O₃ films have been prepared by three kinds of technique. Yb:Er co-doped Al₂O₃ films and Er-doped Al₂O₃ films were firstly fabricated by the medium frequency magnetron synchronous sputtering and the microwave plasma magnetron synchronous sputtering, respectively. The effect of all parameters on quality of the films was explored, and deposition techniques were optimized. The films obtained have many excellences, such as uniform concentration dopant, dense structure, low surface roughness, high refractive index, and so on.4. The relationship among photoluminescence intensity of Er-doped or Yb:Er co-doped Al₂O₃ films and Er-concentrations, Yb:Er concentration ratio, pump power, anneal temperature was measured. The experimental results were explained qualitatively. The optimum Yb:Erratio of the Yb:Er co-doped Al2O3 films is 9:1. The difference of phase structures of the crystal films under different anneal temperature lead to variety of photoluminescence intensity.5. Fabrication techniques of Er-doped or Yb:Er co-doped silicate glass were introduced. The photoluminescence characteristics and absorption spectra of the samples were analyzed. We assure that there are the net gain loss in series system from the experimental results of gain characteristics of two Er-doped or two Yb:Er co-doped silicate bulk glass samples in series. The measurement results are consistent with calculation data.6. The rectangle Yb:Er co-doped Al2O3 waveguide amplifier was firstly fabricated. When signal was modulated to 1Hz sinusoidal wave, the total net gain of the waveguide amplifier is 8.44dB, and the net gain at unit length is 3.77dB/cm pumped under 68mW. The net gain of the waveguide amplifier increases approximately linear as pump power was increased. Threshold pump power is 18mW.7. The net gain characteristics of Er-doped or Yb:Er co-doped silicate glass threats were measured. Under 100mW pump power, the net gains at unit length are 1.96dB/cm and 3.07dB/cm, the optimum lengths are 4.5cm and 2.5cm, respectively.