Wide Band Gap Semiconductor Of Zno And Sic Thin Films And Their Physical Properties,

In the development of semiconductors, Si and Ge is the first generation, GaAs, InP, GaP, InAs and AlAs is the second generation, while the third generation consists of ZnO, SiC, GaN, A1N and diamond etc. With the rapid advance of science and technology, common semiconductor such as Si and GaAs is not competent for the applications in microelectronic and optoelectronic devices designed to operate in severe conditions (high temperature, high power, high frequency, etc). Therefore, the research and development of wide-band-gap semiconductor (Eg>2.3 eV) is very important and urgent.In this thesis, we mainly discussed the synthesis and properties of ZnO and SiC.For ZnO case, we prepared planar, compact and oriented ZnO film using Trifluoroacetate Metalorganic Deposition (TFA-MOD) method. The synthesis of ZnO film, thermochemical process of reaction and optical properties of ZnO film and nanostructure are discussed. Preparation of ZnO film: With plenty of experiments, we prepared planar and compact ZnO film using TFA-MOD method. It's the first time to apply TFA-MOD method in the growth of ZnO film. Optimization of precursor: In TFA-MOD method, the property of precursor sol is very important for the surface morphology, crystalline quality and other properties of ZnO film. We studied the precursor and solved the annoying problem of evaporation in the heat treatment process. The hydrolysis of precursor is the key issue to prevent the evaporation. Zri₄O(CF₃COO)₆ is the most suitable candidate of hydrolyzate. A three-dimensional structure of Zri₄O(CF₃COO)₆ is proposed. By the prevention of evaporation, the yield of ZnO is increased. Furthermore, MEA is added in the sol to optimize the quality and surface morphology of ZnO film. Study of the photoluminescence of ZnO: PL properties of ZnO film and...