Research On 1/f Noise Characterization Of Eldrs Of Bipolar Semiconductor Device

With the rapid development of microelectronics and aerospace technologies, more and more semiconductor devices and integrated circuits are used in the spacecraft. The electronic devices used in space suffer from radiation effects of space particles, which lead to the degeneration of their performance. Since bipolar devices and circuits are widely used in the space and weapon equipment, their radiation effect and ELDRS are widely studied. However, most of the radiation studies on bipolar devices reported so far have mainly focused on experimental results on radiation-induced changes in the measured electrical characteristics of the devices. To the authors’ knowledge, very little data regarding 1/f noise performance degradation with the total dose and the dose rate have been reported for bipolar devices. Compared to electrical characteristics, the 1/ f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of bipolar junction transistors.This paper aims to use l/f noise method to study the radiation effect and ELDRS of bipolar device and circuit. The mechanisms of radiation damage of bipolar devices are studied, and the 1/f noise models are established. The main contents are described as follows:By studying the effect of radiation of PNP bipolar junction transistors radiated at high and low rates, the models of the recombination current at the surface of the space charge region of the emitter-base junction and the 1/f noise are developed. Ionizing-radiation-induced gain degradation in PNP bipolar junction transistors can be attributed to the accumulation of oxide-trapped charges and interface states. The base current is caused by the interface state and is moderated by positive oxide charge. The interface state dominates the excess base current response. At the same time, it is found that the 1/f noise degradations can be also attributed to the accumulation of oxide-trapped charges and interface states. Based on the theory of carrier number fluctuation, a 1/f noise model is developed, which can be used to explain the 1/f noise degradation induced by the radiation. It is found that 1/f noise degraded more severe at low dose rate than at high dose rate. Since the gain and 1/f noise degradations have the same physical origin, and compared to electrical characteristics, the 1/ f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of PNP bipolar junction transistors.By studying the radiation effect of NPN bipolar junction transistors radiated at low dose rate than at high dose rate,the model of the base surface recombination current and the 1/f noise are developed. Based on the models, simple approaches for quantifying the effects of oxide-trapped charges and interface states are proposed. Ionizing-radiation-induced oxide-trapped charges and interface states caused the current and 1/f noise degradation in bipolar junction transistors. Based on the mechanism of radiation damage of NPN bipolar transistor, the models of base surface current and 1/f noise are developed. Since the gain and the 1/f noise degradations have the same physical origin, and compared to electrical characteristics, the 1/ f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of NPN bipolar junction transistors. And, according to these two models, simple approaches for quantifying the effects of oxide-trapped charges and interface states are proposed. According to the result, it shows that the radiation reduced more oxide-trapped charges and interface states at low dose rate than at high dose rate. The approaches are simple to implement and provide insight into the mechanisms and magnitudes of the radiation-induced damage in NPN bipolar junction transistor.By studying the effect of radiation of bipolar linear voltage regulator at high dose rate and low dose rate, a 1/f noise characterization model is developed. The radiations cause the variance of the output voltage and the 1/ f noise voltage. These two kinds of degradations are caused by the degradation in the band-gap reference. The radiations cause an increase in the base surface current of NPN and PNP bipolar junction transistors of the band-gap reference, which leads to the degradation in the output voltage. At the same time, the 1/f noise of the band-gap reference creases with the crease in the base surface current of bipolar junction transistors, which brings about an increase in the output 1/f noise voltage. It is found that 1/f noise degraded more severe at low rate than at high rate. Compared to the electrical parameter, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of LM117.The principles of the power supply circuit of the detector are analyzed, and the effects of radiation of the power supply circuit at high dose rate and low dose rate are studied. After some key devices were radiated at high dose rate and low dose rate, they were replaced on the PCB of power supply circuit. It was found that the output voltage did not change, but the noise performance was degraded. And the degradation of 1/f noise was more obvious atlow dose rate than at high rate. For the power supply circuit of the detector, it shows that the noise parameters are more sensitive than the electrical parameters, so it may be used to characterize the radiation damage of the detector.