The Fabrication Of MgZn(Ni)O Film And The Characterization Of Vertical Structure Uv Photodetectors

UV-detection technology is another dual-use optical detection techniques which following after the infrared and laser detection technology. In particular, infrared detectors for military use, there are many important applications, such as infrared warning and infrared guidance. But due to the threat of infrared countermeasures technology in recent years, and infrared detection susceptible to the surrounding environmental impact, infrared detector high rate of false alarms has become a prominent issue. The UV detector cause more and more attention, because of the environmental impact is small to detect with high precision. Wide bandgap semiconductor materials such as AlGaN and MgZnO due to the direct band gap materials, and in the visible area with a steep cut-off, so expect a high-precision, high efficiency UV detector become true. UV detector is the basis of UV detection technology and the core device which change UV light signal into electrical signals. Semiconductor Ultraviolet detector is a kind of ultraviolet detector, the theory is based on internal photoeffect. The choice of excellent materials, design of reasonable structure and optimization of fabrication process etc. all of these are key factors in improving device performance. In this thesis, we grown MgZn(Ni)O films by electron beam evaporation, the purpose is to prove the feasibility of the UV application. And we also design the vertical structure devices. The main contents were obtained as follows:1. MgO and NiO have the same crystal structure, therefore, MgNiO alloy can avoid the structural phase separation of MgZnO material. We were the first to prepare a single cubic phase, band gap modulation MgNiO film by electron beam evaporation, and fabricated a MSM structure MgNiO UV detector prototype device. The MgNiO alloy thin film is a kind of suitable material for preparing the deep UV detectors.2. The preparation of vertical structure Schottky ZnO-based ultraviolet detectors can avoid p-type doping difficulties of ZnO semiconductor, and can be expected to achieve single-photon detection or array applications. In this thesis, the vertical ZnO-based Schottky structure UV detectors were designed, and measurement of the relevant parameters show that we obtained the expected characteristics of Schottky. The results lay the foundation for the practical application for the future of the ZnO-based ultraviolet detectors.