The Investigation Of Gan-Based Ultraviolet Photodetector

Potential uses of ultraviolet (UV) photodetectors include scientific research, military, space-based, environmental and some industrial applications. GaN-based metal-semiconductor-metal (MSM) UV photodetector has been one of the focuses of interest in recent years. In this paper, high quality GaN-based thin film has been fabricated by motel organic chemical vapor deposition technique. As a result, the carrier concentration of p-type GaN thin films was about 10¹⁸. we have fabricated GaN-based MSM UV photodetector and GaN p-i-n ultraviolet photodetector , the responsivity was about 0.19A/W and 0.95A/W respectively.High quality and varying band gap (3.45～3.81eV) AlGaN thin films were prepared by the optimum design of the growth condition (A1N inter-layer). By annealing treatment, the responsivity was 0.07A/W at 308nm.