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Keyword [Grown]
Result: 161 - 180 | Page: 9 of 9
161. MBE grown microcavities for optoelectronic devices
162. Studies of silicon germanium tunneling heterostructures grown by silicon molecular beam epitaxy
163. A robotic and vision system for locating and transferring container-grown tobacco seedling
164. Gallium arsenide/aluminum(x)-gallium(1-x)arsenide quantum well lasers grown on gallium arsenide and silicon by molecular beam epitaxy
165. Fabrication of novel semiconductor lasers grown by metalorganic chemical vapor deposition
166. Lateral modulation-doped structures of aluminum-gallium arsenide/gallium arsenide grown by selective area liquid-phase epitaxy
167. Influence of the silicon donor (DX center) and growth temperatures on gallium arsenide/aluminum gallium arsenide heterostructures grown by molecular beam epitaxy
168. THE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES FOR MICROWAVE DEVICE APPLICATIONS (QUANTUM WELLS, IMPURITY, PHOTOLUMINESCENCE, MODULATION DOPING)
169. Characterization of Defects on MOCVD Grown Gallium Nitride Using Transient Analysis Techniques
170. Modelling, Design, Growth and Characterization of Strain Balanced Quantum Cascade Lasers (3-11mum), grown by Gas Source Molecular Beam Epitaxy
171. Tensile Quantum Dots and Lattice-Matched Epitaxy on (111) and (110) Surfaces
172. New Aspect in MOCVD of Metal- And N-Polar (Al,Ga)N and Its Device Application
173. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy
174. Defect Analysis in III-V Semiconductor Thin Films Grown by Hydride Vapor Phase Epitaxy
175. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations
176. Characterization and Extended Defect Control in III-Nitrides
177. Characteristics And Reliability Study Of AlGaN/GaN MIS-HEMT Power Switching Devices With MOCVD-in-situ-grown SiN_x Cap Layer
178. Characteristics Of H-diamond MOSFET With High Temperature ALD-grown HfO2 Dielectric
179. Study Of Semipolar(11-22)GaN Grown On Silicon Substrate And Its Heterojunction Properties
180. Bias-modulated Van Der Waals Heterojunction Photodetector Of Vertically Grown Graphene Nanosheets Film
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