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Keyword [Quantum Wells]
Result: 81 - 98 | Page: 5 of 5
81. Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells
82. Molecular beam epitaxy growth of aluminum gallium nitride/gallium nitride quantum wells and investigation of excitonic and intersubband transitions
83. The growth and fabrication of terahertz emitting devices and lasers
84. Heterostructures interface effects on the far-infrared magneto-optical spectra of indium arsenide/gallium antimonide quantum wells
85. Theoretical and experimental investigation of IV-VI mid-infrared multiple quantum wells vertical cavity surface emitting lasers
86. Intersubband transitions in strained indium gallium arsenide quantum wells for multi-color infrared detector applications
87. A novel III-V CCD structure with intersubband detection for infrared sensing
88. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates
89. Growth of high indium content indium gallium arsenide on gallium arsenide substrates for optical applications
90. Novel optoelectronic devices using intersubband transitions in gallium arsenide/aluminum gallium arsenide quantum wells and superlattices: Theory, fabrication, and measurement
91. Band structure engineering for electron tunneling devices
92. THE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES FOR MICROWAVE DEVICE APPLICATIONS (QUANTUM WELLS, IMPURITY, PHOTOLUMINESCENCE, MODULATION DOPING)
93. Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions
94. Research Of Strain Engineered Ge/GeSi Multiple Quantum Wells Electro-absorption Modulators
95. Study On The Fluorescence Dynamics Of InGaN/GaN Multiple Quantum Wells Structure Of Different Growth Conditions
96. Quantum Well Structure Of UV-LED Based On Group ? Nitrides
97. Study On The Homoepitaxial Growth Of Nitrogen-polar GaN Thin Films And Preparation Of Quantum Wells On GaN Substrates
98. Research On Polarization Characteristics Of Superluminescent Diodes
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