Growth and characterization - Globe Thesis

Keyword [Growth and characterization] Result: 61 - 75 \| Page: 4 of 4
61.	Growth and characterization of freestanding gallium nitride substrates by the hydride-metalorganic vapor phase epitaxy technique
62.	Growth and characterization of aluminum gallium nitride/gallium nitride ultraviolet detectors
63.	Growth and characterization of silicon carbide for MEMS pressure sensors
64.	Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors
65.	Growth and characterization of silicon-based optoelectronic devices
66.	Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy
67.	The growth and characterization of multilayer structures by metalorganic chemical vapor deposition
68.	Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers
69.	Growth and characterization of indium antimonide and indium thallium antimonide narrow-bandgap materials for infrared detector applications
70.	Growth and characterization of low-temperature grown gallium arsenide and resonant cavity structure
71.	Molecular beam epitaxial growth and characterization of gallium antimonide, and its use in gallium antimonide/aluminum antimonide heterostructures
72.	High-purity epitaxial growth and characterization of III-V compound semiconductors
73.	Molecular-beam epitaxial growth and characterization of aluminum gallium arsenide/indium gallium arsenide single quantum-well modulation-doped field-effect transistor structures
74.	Modelling, Design, Growth and Characterization of Strain Balanced Quantum Cascade Lasers (3-11mum), grown by Gas Source Molecular Beam Epitaxy
75.	MOCVD Growth And Characterization Of Non-polar N-AlGaN Materials
<<First <Prev Next> Last>> Jump to