gallium arsenide - Globe Thesis

Keyword [gallium arsenide] Result: 181 - 200 \| Page: 10 of 10
181.	Characteristics and applications of frequency modulation of gallium arsenide external cavitiy lasers
182.	THz time-domain spectroscopy of coherent cyclotron phenomena in gallium arsenide heterostructures
183.	Manipulating the epitaxial growth of highly lattice-mismatched III-V semiconductors: Indium arsenide and its alloys on gallium arsenide substrates
184.	Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes
185.	Optical control in gallium arsenide microwave semiconductor devices
186.	Design and technology of millimeter-wave indium aluminum arsenide/indium gallium arsenide high electron mobility transistors (HEMT's) and monolithic integrated circuits
187.	Analysis of high frequency effects in gallium arsenide Schottky barrier diodes
188.	Vertical-multicavity, gallium arsenide-aluminum gallium arsenide PnpN surface-emitting laser
189.	Gallium arsenide quantum well modulators grown on silicon substrates
190.	Growth and electronic properties of gallium arsenide and germanium metal insulator semiconductor structures
191.	Electro-optic probing of gallium arsenide microwave circuits
192.	Differential absorption lidar measurements of atmospheric water vapor using a pseudonoise code modulated aluminum gallium arsenide laser
193.	Atomic layer epitaxy of gallium arsenide and aluminum gallium arsenide for device applications
194.	High-performance receiver front-ends in gallium arsenide-on-silicon technology for local optical interconnect systems
195.	Studies of the structural defects in gallium arsenide on silicon grown by molecular beam epitaxy
196.	Growth of high indium content indium gallium arsenide on gallium arsenide substrates for optical applications
197.	Gallium arsenide grown by two molecular beam epitaxy techniques at reduced substrate temperatures
198.	Integrated amplifier/antenna elements for gallium arsenide monolithic phased arrays
199.	Novel optoelectronic devices using intersubband transitions in gallium arsenide/aluminum gallium arsenide quantum wells and superlattices: Theory, fabrication, and measurement
200.	Design and fabrication of gallium arsenide-aluminum gallium arsenide two-mode cross-coupled bistable laser diodes for optical switching and memory applications
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