Keyword [Oxide semiconductor] Result: 181 - 200 | Page: 10 of 10 181.  Nontraditional Amorphous Oxide Semiconductor Thin-Film Transistor Fabrication 182.  Electron tunneling spectroscopy of silicon metal-oxide-semiconductor system with thin gate dielectric 183.  Low-power CMOS radio frequency integrated circuits for frequency synthesis 184.  Indium-gallium-arsenide Buried Channel Metal-Oxide-Semiconductor Field-Effect Transistors for Low-Power Logic Applications 185.  Ultraviolet-assisted oxidation and nitridation of hafnium and hafnium aluminum alloys as potential gate dielectrics for metal oxide semiconductor applications 186.  An optical source for characterizing complementary metal oxide semiconductor (CMOS) imagers 187.  Analysis techniques and modeling for noise and distortion of CMOS down-conversion mixers 188.  Total ionizing dose effects in power vertical double-diffused metal-oxide-semiconductor field effect transistors 189.  Impact of uniaxial stress on silicon diodes and metal-oxide-semiconductor-field-effect-transistors under radiation 190.  Characterization of low-frequency noise in metal oxide semiconductor field effect transistors 191.  Lateral solid phase epitaxy of silicon and application to the fabrication of metal oxide semiconductor field-effect transistors 192.  Characterization of Indium Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors 193.  Modeling of Total Ionizing Dose Effects in Advanced Complementary Metal-Oxide-Semiconductor Technologies 194.  Quad-band global system for mobile communications complementary metal-oxide-semiconductor transmitter 195.  Complementary metal-oxide-semiconductor frequency conversion techniques for wideband code division multiple acces 196.  Novel silicon metal-oxide semiconductor devices for molecular sensing and hot electron spectroscopy 197.  Ultraviolet-assisted processing of dielectric thin-films for metal oxide semiconductor applications 198.  Characterization of high-kappa gate stacks in metal-oxide-semiconductor capacitors 199.  Design of advanced low-power, sub-quarter micron metal oxide semiconductor field effect transistors (MOSFET) 200.  Device design and fabrication of aluminum gallium nitride/gallium nitride metal-oxide-semiconductor heterostructure field-effect transistors   <<First  <Prev  Next>  Last>>  Jump to

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