Molecular beam - Globe Thesis

Keyword [Molecular beam] Result: 181 - 200 \| Page: 10 of 10
181.	Silicon (011) and silicon germanium (011) gas-source molecular beam epitaxy: Surface reconstructions, growth kinetics, and germanium segregation
182.	Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport
183.	Molecular beam epitaxy of quantum dots for high-speed photodetectors
184.	Unstrained and strained semiconductor nanostructure fabrication via molecular beam epitaxical growth on non-planar patterned gallium arsenide(001) substrates
185.	Gas source molecular beam epitaxy of lasers and detectors using strained layers of indium(1-x)gallium(x)arsenide(y)phosphide(1-y)
186.	Intelligent monitoring and control system during molecular beam epitaxy growth
187.	Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth
188.	Growth and evaluation of gallium nitride on silicon(111) substrates using electron cyclotron resonance plasma-assisted molecular beam epitaxy
189.	InP/InGaAs heterojunction bipolar transistors and field-effect transistors grown by gas -source molecular beam epitaxy
190.	Fabrication of self-assembled silicon germanium quantum nanostructures on silicon surfaces by molecular beam epitaxy
191.	H-mediated film growth and dopant incorporation kinetics during silicon germanium(001):boron gas-source molecular beam epitaxy
192.	Design of a molecular beam apparatus to generate mass selected ion clusters: Infrared absorption of fluoroform in cryogenic solutions
193.	Growth of wurtzite gallium nitride epitaxial films on sapphire substrate by reactive molecular beam epitaxy and material characterization
194.	Laser ablation/molecular beam spectroscopy of titanium monofluoride and cobalt monochloride
195.	Growth by molecular beam epitaxy and characterization of Al(x)Ga(1-x)N alloys and heterostructures
196.	Nonlinear modeling and control design for substrate temperature in molecular beam epitaxy
197.	Normal incidence devices based on antimonide materials grown by molecular beam epitaxy
198.	Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy
199.	Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers
200.	Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy
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