Molecular Beam Epitaxy - Globe Thesis

Keyword [Molecular Beam Epitaxy] Result: 181 - 200 \| Page: 10 of 10
181.	Electrical characterization of nonstoichiometric GaAs grown at low temperature by molecular beam epitaxy
182.	High-performance resonant-cavity enhanced photodiodes grown by molecular beam epitaxy
183.	Gallium arsenide molecular beam epitaxy: Low temperature and surfactant-mediated
184.	Structural, chemical, and electrical characterization of III-V materials grown by low temperature molecular beam epitaxy
185.	Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers
186.	Design and implementation of a molecular beam epitaxy system for growth of III-IV semiconductors
187.	Monitoring and enhancing molecular beam epitaxy using glancing angle low energy ions
188.	The effects of growth kinetics and thermodynamics on the properties of gallium nitride grown by molecular beam epitaxy
189.	In situ pyrometric interferometry monitoring and control growth and carbon doping of gallium arsenide and aluminum gallium arsenide in solid source molecular beam epitaxy
190.	Optical characterization of indium arsenide antimonide semiconductors grown by molecular beam epitaxy
191.	Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy
192.	Studies of the structural defects in gallium arsenide on silicon grown by molecular beam epitaxy
193.	Gallium arsenide grown by two molecular beam epitaxy techniques at reduced substrate temperatures
194.	In situ processing of quantum structures using focused ion beam implantation and molecular beam epitaxy growth and regrowth
195.	Studies and applications of molecular beam epitaxy
196.	Molecular beam epitaxy of gallium arsenide/alluminum gallium arsenide heterostructures and electron correlation effects in two-dimensional systems
197.	Studies of silicon germanium tunneling heterostructures grown by silicon molecular beam epitaxy
198.	Gallium arsenide/aluminum(x)-gallium(1-x)arsenide quantum well lasers grown on gallium arsenide and silicon by molecular beam epitaxy
199.	Molecular beam epitaxy of strained heterostructures and their application to optoelectronic devices
200.	Influence of the silicon donor (DX center) and growth temperatures on gallium arsenide/aluminum gallium arsenide heterostructures grown by molecular beam epitaxy
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