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Keyword [Indium]
Result: 181 - 200 | Page: 10 of 10
181. Preparation Of Antimony-based Compound Semiconductor Nanowires And Research On Its Photodetectors
182. Technical Research On High-speed Photoconductive Switches For RF Signal Processing
183. Epitaxy and structural characterizations of green and deep green gallium indium nitride/gallium nitride light-emitting diodes
184. Growth and characterization of non-polar gallium nitride materials and investigation of efficiency droop in indium gallium nitride light emitting diodes
185. Indium arsenide quantum well micro-Hall devices for magnetic detection of biomolecular labels
186. Amorphous indium gallium zinc oxide thin film transistors for active-matrix organic light-emitting displays
187. The effects of gallium arsenide substrate miscut on indium arsenide quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS)
188. Growth, Fabrication, and Characterization of Continuous-Wave Aluminum Gallium Nitride -Cladding-Free m-plane Indium Gallium Nitride / Gallium Nitride Laser Diodes
189. Amorphous indium gallium zinc oxide thin film transistor for future optoelectronics
190. Temperature dependence of the thermal conductivity of an indium gallium zinc oxide thin film
191. Characteristics of an Indium Asenide-based nBn photodetectors grown by molecular beam epitaxy
192. Phase separation and inversion domain boundaries in indium gallium nitride/gallium nitride multiple quantum-wells and indium gallium nitride epitaxial layers
193. Investigation of indium arsenide/gallium antimonide superlattice based nBn detectors and focal plane arrays
194. Longwave and bi-color type-II indium arsenide/(indium) gallium antimonide superlattice infrared detectors
195. Focal plane arrays based on Type-II indium arsenide/gallium antimonide superlattices
196. Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates
197. Design, fabrication, and modeling of indium phosphide double-heterojunction bipolar transistors with sub-millimeter wave cutoff frequency
198. 1.55 um aluminum gallium indium arsenide strained MQW laser diodes
199. Simulation of indium antimonide devices using drift-diffusion equations
200. Overcoming the efficiency droop in gallium indium nitride light-emitting diodes and novel technologies for c-plane gallium indium nitride polarized emitters
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