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Keyword [Heterostructure]
Result: 181 - 200 | Page: 10 of 10
181. Indium phosphide-based materials and heterostructure devices, and their applications in monolithic integrated NPN and PNP HBT circuits
182. Novel gallium nitride based microwave noise and power heterostructure field effect transistors
183. Device design and fabrication of aluminum gallium nitride/gallium nitride metal-oxide-semiconductor heterostructure field-effect transistors
184. Device design and transport issues in nitride and ferroelectric heterostructure devices
185. Characterization of strained quantum well tunneling injection and separate confinement heterostructure lasers
186. Growth, fabrication, and device characterization of indium gallium arsenide channel gallium arsenide-based heterostructure field effect transistors
187. An enhancement/depletion process for III-V compound semiconductor heterostructure field-effect transistors and optoelectronic integrated circuits
188. The design, analysis and characterization of high-performance heterostructure bipolar transistors
189. Dipole heterostructure field effect transistors
190. Light-emitting heterostructure thyristors
191. Theoretical investigations of reduced size effects in gallium-arsenide and heterostructure electron devices
192. VISIBLE-SPECTRUM INDIUM-GALLIUM - PHOSPHIDE - ARSENIDE LASERS AND HIGH-PRESSURE MEASUREMENTS ON QUANTUM-WELL HETEROSTRUCTURE LASERS
193. TWO APPROACHES TOWARDS A LOW POWER SOLID STATE LASER
194. Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing
195. Electron transport dynamics in semiconductor heterostructure devices
196. Interface study of high k dielectric on aluminium gallium nitride/gallium nitride heterostructure
197. Gallium Nitride Based Heterostructure Interband Tunnel Junctions
198. Study On GaN-based Heterostructure IMPATT Diode In Sub-millimeter Wave Band
199. Silicon Based Metal Oxide Heterostructure Gas Sensor
200. Studies Of Polarization Coulomb Field Scatter Related To Barrier Layer And P-GaN Layer In GaN-Based Heterostructure Field-Effect Transistors
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