Molecular beam - Globe Thesis

Keyword [Molecular beam] Result: 161 - 180 \| Page: 9 of 10
161.	Optimization of aluminum gallium nitride growth by molecular beam epitaxy and its effect on electron mobility in a two-dimensional electron gas
162.	Growth and defect characterization of low temperature molecular beam epitaxy GaAs
163.	Hetero- and homo-epitaxial growth of III-nitride based junctions and devices by molecular beam epitaxy
164.	Molecular beam epitaxy of gallium nitride and gallium nitride-manganese
165.	Nanometer characterization of quantum compound semiconductor heterostructures grown by molecular beam epitaxy
166.	Critical issues of complex, epitaxial oxide growth and integration with silicon by molecular beam epitaxy
167.	Quantum cascade lasers grown by gas-source molecular beam epitaxy
168.	Molecular-beam-epitaxial growth, properties, and device applications of thulium (phosphide, arsenide) alloys on gallium arsenide
169.	Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy
170.	High performance 1300 nm photodetectors grown by molecular beam epitaxy
171.	Reaction paths for self-organized surface roughening of silicon-germanium alloys during hydride gas-source molecular beam epitaxy
172.	The optimization of the growth on (111) gallium arsenide and (111) indium phosphide substrates by molecular beam epitaxy
173.	Growth kinetics and doping of gallium nitride grown by rf-plasma assisted molecular beam epitaxy
174.	Solid source molecular beam epitaxy of indium phosphide-based composite-channel high electron mobility transistor structures for microwave and millimeter-wave power applications
175.	The growth of gallium nitride and indium nitride by molecular beam epitaxy
176.	Ultraviolet photodetectors based on aluminum gallium nitride films grown by molecular beam epitaxy
177.	High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy
178.	Shadow mask selective area molecular beam epitaxy for applications in device processing and integration
179.	Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices
180.	Ultrafast all-optical switching based on indium gallium arsenic phosphide grown by helium plasma-assisted molecular beam epitaxy
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