Heterostructure - Globe Thesis

Keyword [Heterostructure] Result: 161 - 180 \| Page: 9 of 10
161.	Modeling and measurement of the differential resistance and ideality factors in heterostructure light emitting diodes and laser diodes
162.	High-performance antimony-heterostructure backward diodes for millimeter-wave detection and imaging
163.	Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs
164.	Millimeter and sub-millimeter wave heterostructure barrier varactor frequency multipliers
165.	High Performance RF Control Devices Using Capacitively Coupled Contacts (C3) Over III-N Heterostructures
166.	Silicon/silicon germanium heterostructures: Materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors
167.	Multi-spectral Photodetectors on GaAs Substrates using Metamorphic Epitaxy and Hybrid III-V Heterostructure
168.	Rigorous Investigation of AlGaN/GaN Heterostructure Surface Treatments with Si Thin Films
169.	The design, growth, and characterization of antimonide-based composite-channel heterostructure field-effect transistors
170.	Process technology development for advanced silicon heterostructure devices
171.	The radio-frequency characteristics of insulated submicron-gate III-N heterostructure field-effect transistors
172.	Aluminum gallium arsenide-gallium arsenide-indium gallium arsenide-indium arsenide quantum dot coupled to quantum well heterostructure lasers by low-pressure metalorganic chemical vapor deposition
173.	Microwave heterostructure device characterization and modeling for their high-power and low-noise properties
174.	Radiation effects on III-V heterostructure devices
175.	MOCVD growth of gallium nitride and fabrication of aluminum gallium nitride/gallium nitride double heterostructure LED
176.	Novel heterostructure metal-semiconductor-metal (HMSM) photodetectors with resonant cavity for fiber optic communications
177.	The epitaxial growth of gallium nitride and aluminum gallium nitride/gallium nitride heterostructure field effect transistors (HFET) on lithium gallate substrates
178.	The indium arsenide/indium antimonide-based and gallium arsenide/aluminum gallium arsenide-based heterostructure field-effect transistors grown on hetero-substrates
179.	Double heterostructure opto-electronic switch (DOES) analysis and its application for photonic analog-to-digital conversion
180.	Heterostructure-integrated thermionic cooling of optoelectronic devices
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