Antimonide - Globe Thesis

Keyword [Antimonide] Result: 41 - 60 \| Page: 3 of 5
41.	Interfacial misfit dislocation array based growth mode for demonstration of monolithically integrated optically-pumped antimonide lasers on silicon
42.	Indium arsenide/gallium antimonide type-II strained-layer superlattice infrared photodetectors
43.	Molecular beam epitaxy of narrow gap quantum wells: Indium antimonide, Indium-gallium-arsenic and elemental antimony
44.	Mid-infrared multiple quantum well lasers using digitally-grown aluminum indium arsenic antimonide barriers and strained indium arsenic antimonide wells
45.	Type II indium arsenide/gallium antimonide superlattice photodiodes and infrared focal plane arrays
46.	Antimonide-based type-II quantum well infrared photodetectors
47.	Study of palladium/gallium antimonide reactions and ohmic contacts to N-type gallium antimonide
48.	Indium phosphide-based gallium arsenide antimonide double HBTs and related MMICs for signal generation and amplification
49.	Electron beam lithography for the fabrication of nanopillars in type II indium arsenide/gallium antimonide superlattices for multicolor infrared focal plane arrays
50.	Type-II Indium Arsenide/Gallium Antimonide Material and Photodetectors for High Performance, High Temperature and Low Cost Infrared Detection and Imaging
51.	Strain-balanced Indium Arsenide-Indium Arsenic Antimonide Type-II Superlattices on Gallium Antimonide Substrates for Infrared Photodetector Applications
52.	Fabrication and characterization of antimonide based near infrared photodetectors
53.	Band-edge optical properties of gallium indium nitride arsenide (antimonide) and the relation to atomic structure
54.	Gain and loss measurements in gallium antimonide-based mid-infrared lasers
55.	Plasma etching of antimonide based III-V semiconductor materials and device structures
56.	Growth of 1.5 micron gallium indium nitride arsenide antimonide vertical cavity surface emitting lasers by molecular beam epitaxy
57.	Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral infrared detection and imaging
58.	Development of epi-ready bromine ion-beam-assisted etched gallium antimonide substrates for gallium antimonide molecular beam epitaxy
59.	Process modeling of indium arsenide/aluminum antimonide materials for high electron mobility transistors grown by molecular beam epitaxy
60.	Design, fabrication and characterization of antimonide MOS transistors
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