Antimonide - Globe Thesis

Keyword [Antimonide] Result: 21 - 40 \| Page: 2 of 5
21.	Study Of InGaAs(Sb) Near-and Mid-Infrared Semiconductor Laser Materials And Devices Fabrication
22.	Study Of The Device Characteristics Of Antimonide-Based Inp Dhbts
23.	Research On Gratings Preparation Of 2μm Antimonide Distributed Feedback Laser Diode
24.	Study On The Growth And Properties Of Indium Antimonide(InSb) And Indium Iodide(InI) Crystal Based On Vertical Bridgman Method
25.	Research On The Key Technologies Of The Third Generation Antimonide-based Infrared Detectors
26.	Study On The MOCVD Growth And Infrared Characteristics Of GaSb/InSb/InP Infrared Detector Structures
27.	Molecular Beam Epitaxial Growth Of InAs/AlSb 2DEG Structure
28.	Design And Simulation Of Sb-based Superlattice Very-Long-Wavelength Infrared Detector
29.	Investigation of indium arsenide/gallium antimonide superlattice based nBn detectors and focal plane arrays
30.	Longwave and bi-color type-II indium arsenide/(indium) gallium antimonide superlattice infrared detectors
31.	Theoretical Design and Material Growth of Type-II Antimonide-based Superlattices for Infrared Detection and Imaging
32.	Focal plane arrays based on Type-II indium arsenide/gallium antimonide superlattices
33.	Simulation of indium antimonide devices using drift-diffusion equations
34.	Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy
35.	Minority carrier dynamics of type-II indium arsenide/gallium antimonide superlattice photodiodes via optical and electrical characterization
36.	MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires
37.	The effects of atomic hydrogen surface cleaning on the fabrication of ohmic contacts on n-type gallium antimonide
38.	Fabrication and characterization of high performance gallium antimonide photodiodes
39.	Design and characterization of indium gallium arsenic phosphide/indium phosphide and indium(aluminum) gallium arsenic antimonide/gallium antimonide laser diode arrays
40.	High-performance 1.55-uM gallium indium nitride arsenide antimonide lasers grown on gallium arsenide
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