Research And Design Of C And X Band MMIC Power Amplifier

In the 21st century,the demand for military and civilian communication has increased significantly,and the development of radio frequency communication has attracted unprecedented attention.Power amplifiers are widely applied in RF front-end devices and play the role of amplifying transmission signals in radio frequency circuits.In recent years,the rapid development of 5G communication makes C-band radio frequency devices covering 5G communication frequency bands once again attract much attention and commercial applications.At the same time,due to the wide use of X-band solutions in military radar systems,domestic and foreign research teams put research efforts a lot on C-band and X-band RF devices.As the key components in the radio frequency circuit system,power amplifiers have attracted widespread attention in particular.In this thesis,two power amplifiers working in C-band and X-band are designed based on current research hotspots.Firstly,literature research is conducted on the design of C-band and X-band power amplifiers,and the basic theory of power amplifiers is explained in detail.Then,based on the 0.5?m GaAs p HEMT process,the design process of C-band and X-band power amplifiers was introduced in detail,including the selection of transistor and the design of bias circuit,impedance matching,etc.,and finally the simulation of the designed power amplifier is completed.The C-band power amplifier adopts a three-stage amplification structure,and the output stage uses power combination of 32 transistors.The matching network are completed based on the concept of power dividing matching to reduce the chip size.The final simulation completed by ADS shows that the minimum of small signal gain in the band of 5?6 GHz is 28 d B,peak gain is 30.4d B,the gain flatness is less than±1.2 d B,₁₁and₂₂ are both less than-10 d B in the band,the typical values of saturated output power and power added efficiency(PAE)are42.2 d Bm and 28%,the chip size is:4.05 mm×3.95 mm;referring to the design of the C-band power amplifier,the X-band power amplifier also uses a three-stage amplification structure and a power dividing matching network.The output stage uses 16 transistors.The simulation shows that the minimum of small signal gain is 24d B,and peak gain is25.8 d B in the frequency band of 8.5?10.5 GHz,₁₁<-7 d B,₂₂<-10 d B,gain flatness<±0.9 d B,the typical value of saturated output power is 39 d Bm,and PAE is 25%,chip size:2.85 mm×2.9 mm.Also,two drive amplifiers that work in C-band and X-band are designed respectively to meet the need of testing work.