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Ka Band Mmic Power Amplifier Monolithic High Developed

Posted on:2013-03-15Degree:MasterType:Thesis
Country:ChinaCandidate:M GaoFull Text:PDF
GTID:2248330374485248Subject:Radio physics
Abstract/Summary:PDF Full Text Request
Millimeter wave systems’ application has become increasingly prevalent and far-reaching as the research on microwave communication continues, especially in the field of national defense and the military. In the modern electronic warfare, there’s an increasing demand on equipments for small volume, light weight, high reliability, high stability, strongly anti-interference ability, the ability of large quantities generation, good consistency of products’performance and so on. Considering factors mentioned above, microwave monolithic integrated circuit has being appealing to cover all these advantages.Millimeter wave power amplifier is one of the most important parts of millimeter wave electronic systems. Comparing with the western developed countries, our researches on MMIC PA of this band are far backward, and their products are embargoed. This project mainly focuses on researching and designing this kind of chip, exploring integrated circuit with high power output ability.Firstly, the paper introduces the characteristics of MMIC technology, and its present situation and dynamic development at home and abroad. Secondly, provides the design targets on the base of Triquint TGA4916. The part is designed using Win’s proven standard0.15um gate Power pHEMT production process. Thirdly, the paper introduces the working principles and main parameters of PA, makes the topological structure of the balanced PA chip as three-stage, with thirty-two way power amplifier of last stage. The pHEMTs is set to operate at class A. The circuit design includes Lange-couplers, bias circuits, matching circuits, power combiner and power divider circuits and so on. After optimizations, the layout of circuit is adjusted by electromagnetic simulation, which is used for chip manufacturing. The HPA chip realizes bandwidth from28GHz to31GHz, with small signal gain higher than23dB. When input power at17dBm, the simulated output power larger than40dBm, with24%PAE. The chip dimensions are5.52x7.25x0.05mm.Finally, the paper briefly introduces design and test of a Ka-band MMIC single-balanced Mixer, which is designed by0.15um low noise power amplifier process. RF and LO operates in between30-40GHz, the mixer has two output channels, IF works from DC to5GHz, the conversion loss of each channel is bellow-lOdB, typical conversion loss value is-8dB, with no DC power consumption. The chip dimension is1.68mm×1.81mm.
Keywords/Search Tags:MMIC, Ka-band, high power amplifier, GaAs, pHEMT
PDF Full Text Request
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