Simulation And Research On Electrothermal Behaviorof Positive-biased Safe Working Area Of IGBT

Insulate Gate Bipolar Transistor?IGBT?is a Darlington structure which composed byMOSFET and bipolar power transistor.It has many advantages,such as MOSFET's highinput impedance,low power gate drive,simple drive circuit,high switching speed,bipolartransistor's high current density capability,low saturation voltage,high current processingcapability.And it is an ideal power device to meet the developing trend of many high voltage,high current and high switch speed.It is necessary of modularization for IGBT.At present,electro-thermal behaviors of module are main factors for the development of IGBT.Sotheprimary work of this paper is the research ofelectro-thermal characteristics of IGBT.Themain results were given as follows:1.The IGBT threshold voltage,breakdown voltage,dynamic characteristics,etc.were simulated using MEDICI software.Next,a new Fin-p IGBT structure is introduced in detail,which optimizes the trade-off relationship between conduction voltage drop and turn-off loss,and carries out the carrier concentration distribution and current distribution curve when it is turned off.2.The effects of temperature on IGBT threshold voltage,breakdown voltage,and latch-up characteristics were simulated using MEDICI software.And discuss several common heat dissipation measures in detail.3.Listed the more common design methods that can improve the IGBT anti-latch ability.Based on the floating N-doped buried IGBT,a novel SiO₂ buried IGBT is proposed.Compared with floating N-doped buried IGBT,the IGBT proposed in this paper can increase the latch current density by more than 50%.Compared with traditional IGBT,the new IGBT can increase the latch current density by more than 100%without affecting the output and switching characteristics.