High-speed Igbt And Igbt Latch-up Immunity Performance Optimization

The article summarizes the development history of the early invention of IGBT from the point of technical development, and introduces the progress and status of dynamic control of IGBT anode emitter more comprehensively, and lists the current common design methods which can improve the latch-up immunity of IGBT.The advanced circuit module in MEDICI is used to study the two kinds of structures of high-speed IGBT, both of which are designed based on the patent --a high speed IGBT [27] by Professor Xingbi Chen. The high-speed IGBT can achieve dynamic control of the anode, and the appropriate step control signal is generated by the unique structure of the voltage terminal can generate appropriate anode control signal, without the help of the low voltage supply. The simulation result shows that, the proposed high speed IGBT has elimited the current tail, and the turn-off time has been largely reduced, from original 18μs to 0.8μs. However, the on-state voltage drop of this high speed IGBT is 1.4V, which is little larger than the compared common structure with 1.35V forward voltage drop.A new kind of cell of IGBT emitter is studied and the design method is given. The cell places p+ and n+ side by side and perpendicular to one side of the channel in order to shorten the path of holes without affecting the effective channel width per unit area. Compared with traditional anti-latch method which uses deep injection of P+, the latch current of the new structure with optimized design is increased by about 8 times; when Vce is 1.5V, the current density of the new cell is 3 times bigger than before; and the static blocking voltage of the cell has also increased 20%, thus extending the safe operating area of IGBT and simplifying the technology at the same time.