Study On Single Particle Transient Effect Of DSOI Devices

The development of CMOS is following the step of Moore's Law,which reduces the size of feature,and at the same time the gradual increase in the subthreshold current and gate dielectric leakage current hindered the further development of CMOS technology.So the key way to develop the CMOS nodes under 22 nm is to reduce the leakage current,improving its stability.Solutions bring in new technologies and new materials,such as stress silicon technology,high-k dielectric media and ferroelectric materials,etc.and the use of new device structure,for instance SOI(Silicon on Insulator),dualgate,multigate MOSFET,FinFET,etc.The SOI device has the advantages of weak short channel effect,high transconductance,steep subthreshold slope and low parasitic capacitance.Initially,the main purpose of the DSOI(drain and source on insulator)structure is put forward to suppress the floating and self-heating effects of SOI devices.Anenergy particle(such as heavy ions or neutrons)on the bombardment of semiconductor materials will cause it to ionization and thus lead to the abnormal operation of the device,this is called the device single-particle transient effects.The narrowing of the device's feature size leads to the increasing sensitivity of the device to the radiation and the increasing effect of the single particle effect.Therefore,it is necessary to study on how to suppress the single particle effect.This paper finds that the unique DSOI device structure has the absolute advantage in suppressing the single particle effect.Based on the above reasons,this paper makes use of the device simulation software Sentaurus TCAD to study the single-particle effect mechanism of DSOI devices.Firstly,in this paper,the mechanism of single-particle transient effect in a single DSOI device is studied.The electrical characteristics of 45 nm feature size DSOI devices and the single particle transients effect in DSOI devices with different single particle incidence are simulated by simulation software Sentaurus TCAD.Secondly,the transponder software is used to study the transient effects of different single particle incidence in DSOI devices with different structures.Finally,the seven level reverse chain of DSOI devices is constructed and simulated by mixed-mode numerical.From points a single semiconductor devices and circuit-level of view,thesingle-particle transient effect of DSOI devices is studied by computer software simulation.The simulation results show that DSOI devices have the same excellent electrical characteristics as SOI devices,while the drain and the substrate of DSOI devices are buried between the buried layer,so that DSOI devices successfully suppress the FBEs and that the self-heating effect of the SOI devices.The drain of N-type DSOI device can't collect the ionizes electronic generated by the semiconductor materials incident ion bombardment because of the buried layer.In the buried layer and substrate interface of P-type DSOI devices,the ionizations of the semiconductor material are happened which lead to the electron-induced potential changes due to oxygen layer buried deep will not cause severe bipolar transistor amplification effect.Since the drain does not absorb too many holes,so the DSOI device also has excellent single particle transient effect reinforcement.