The Design And Optimization Of HVPE Reactor Based On The Numerical Simulation

Many domestic and foreign researchers pay much attention to GaN due to its excellent features and huge application market.With the increasment of demand of GaN,the study of GaN substrate has become a hot topic while HVPE is most viable. Based on computational fluid dynamics,the hydride vapor phase epitaxy of GaN in a vertical flow reactor was studied in this paper by finite element method.Because GaN in the intake pipe outlet will damage the reaction chamber,the separator gas is used to separate GaCl and NH3 in this paper. The distributions of GaCl and NH3 on the substrate are affected by the flow of separator gas in two-dimension simulation and three-dimension simulation. It is best for the growth of GaN when the flow of separator is 500 sccm.This paper analyze the deposition rate of GaN with different ratios of V and III of As the ratio of V and III increased,relative uniformity of Ga N becomes better then worse in two-dimension simulation while better in three-dimension simulation.It will affect the quality of GaN when the ratio of V and III is too large.It is best for GaN when the ratio of V and III is 70.The influence of the angle of separator gas on the distribution of GaCl and NH3 molar concentration was studied with three-dimension simulation.Although increasing the angle of separator gas can improve the uniformity of GaN,a sharp decline in growth rate of GaN caused by large angle of separator gas.A small angle of separator gas should be taken in the experiment.It is best for the growth of Ga N when the flow of N2 is 9500 sccm.The relative uniformity is less than 6% with 4 inches substrate in this paper.Experiments using CFD software saves costs for the preparation of high quality GaN,so CFD have a great significance for production of GaN.