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Research And Design Of Control System For 2-6 Inch Vertical Hydride Vapor Phase Epitaxy(HVPE)Equipment

Posted on:2022-05-16Degree:MasterType:Thesis
Country:ChinaCandidate:X T ZhangFull Text:PDF
GTID:2518306308998689Subject:Control Science and Engineering
Abstract/Summary:PDF Full Text Request
Gallium nitride plays an indispensable role in the construction of 5G base stations.my country urgently needs to make breakthroughs in domestic gallium nitride growth equipment.The topic is selected from the national key research and development plan.This article focuses on the study of key control technologies for the preparation of a variety of sizes such as 2 inches,4 inches,and large size 6 inches gallium nitride and gallium oxide substrate materials.This article mainly designs,studies and debugs the automatic control system of vertical HVPE equipment.Meet the actual growth requirements of gallium nitride or gallium oxide substrate materials.In the growth process of gallium nitride or gallium oxide substrate materials,the growth environment is very complicated,the temperature in the growth temperature zone is very demanding,and the growth conditions need to be controlled relatively well in order to grow a conforming high-quality substrate.Therefore,in response to the above requirements,this paper has conducted in-depth research and analysis on the growth conditions related to the substrate,designed a set of vertical HVPE equipment automation control system,and divided the control system into multiple subsystems according to the function to conduct separate research and design,Also carried out related research and design on the relationship between the various subsystems.Design a high-level monitoring with an easy-to-operate interface and a fully functional PLC control program to realize the setting and control of various parameters of the growth process,and realize the overall coordinated control of temperature,gas mass flow,pressure,movement,water cooling and exhaust gas treatment,etc.Analyze the factors related to the temperature in the multi-temperature zone,and design the multi-temperature zone temperature control subsystem for the growth substrate process of the vertical HVPE reactor.Real-time temperature measurement modeling of temperature data in different temperature zones in the actual growth process,using fuzzy RBF neural network PID to analyze and control the temperature of the vertical HVPE reactor temperature zone,so that the temperature of the corresponding temperature zone can be changed in time according to the growth setting parameters,and has high robustness.In HVPE gallium nitride or gallium oxide growth equipment,the substrate can be smoothly raised and lowered,and the substrate tray speed can be accurately controlled to achieve optimized control of the motion control subsystem.High-quality growth of single crystal substrates and efficient and stable operation of HVPE reactors It is of great significance.This paper analyzes and designs the substrate tray's rotation and lifting motion control system.The tray is designed with quartz that can place substrates of various sizes.The lifting part adopts a dual-motor cooperative control strategy.Through theoretical simulation analysis,the simulation results show that the two motors have good synchronization performance.
Keywords/Search Tags:HVPE hydride vapor phase epitaxy, semiconductor, fuzzy RBF neural network, dual-motor cooperative control
PDF Full Text Request
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