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Research And Design Of Novel Hydride Vapor Phase Epitaxy Equipment

Posted on:2014-03-31Degree:MasterType:Thesis
Country:ChinaCandidate:C Y ZhiFull Text:PDF
GTID:2268330422962855Subject:Mechanical Manufacturing and Automation
Abstract/Summary:PDF Full Text Request
The continuous development of semiconductor technology promotes the wide applications of semiconductor materials. Among the semiconductor materials, GaN has advantageous properties, such as wide bandgap, high breakdown voltage, large thermal conductivity, high electron saturation drift velocity and excellent chemical stability, which makes it own the highest electro-optical conversion efficiency in theory.Due to lack of GaN single crystal material, the epitaxy of GaN-based material s is only implemented on heterogeneous substrates. The crystal quality of GaN-based materials, the selection and design of buffer layers depends on the characteristics of the substrate. So it is an urgent and meaningful work to research self-supporting GaN substrates, and achieve the homoepitaxial of GaN.The main preparation method of GaN substrate is hydride vapor phase epitaxial (HVPE). The epitaxy speed in HVPE system is very fast, but due to the restriction of equipment structure, HVPE has not yet formed a large-scale production.In this thesis, with the exhaustive study of several domestic and international mainstream MOCVD system and HVPE system, novel HVPE equipment is designed. There are two main innovations in this HVPE equipment:First, in view of the device characteristics of MOCVD, which is capable of large-scale production, this equipment is designed for mass production of GaN substrate; second, assemble HVPE system and MOCVD system together, to form pipelined fabrication of the substrate and epitaxial layers. The detailed contents of this thesis are as follows:Firstly, the principle and structure characteristics of MOCVD and HVPE system in detail are introduced, and the similarities and differences between the two are compared.Then, MOCVD and HVPE system structure are introduced, and a new HVPE system is designed to achieve large-scale growth of GaN substrate, furthermore, integrated into MOCVD system. Multi-physics coupling finite element analysis is applied to verify the feasibility.Finally, the pipeline system design of HVPE is introduced.
Keywords/Search Tags:HVPE, MOCVD, gallium nitride substrate, scale production
PDF Full Text Request
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