The Infrared Receiver Chip Based On Cmos Technology Front-end Design And Realization

Considered the market demand and the foreground of the infrared remote control, the scheme of a middle-grade IC of the infrared remote control receiver, fabricated with the Silicon gate COMS technology, is proffered in the paper. The anterior part of the IC, including the I-V converter and the preamplifier, is entirely designed and layouted.Firstly, concerned information is summarized, such as the working principle, the components and the transmission mode of the infrared remote control system. The surroundings noise is considered too. With the knowledge, the running flow of the IC is concluded. The scheme and each target are decided.Secondly, a structure with the floating resistance is designed as the I-V converter, considering the infrared detector. An active high-pass filter is used as the preamplifier, which is composed of resistances, capacitances and a folded cascade fully differential OTA (Operational Transconductance Amplifiers). The circuits are simulated by HSPICE, using the advanced EDA tool Cadence and 0.5μm CMOS mix-signal-Si gate process model of CSMC.The layout of the anterior part is 230*120μm~2 or so. The layout of the whole chip is 850*700μm~2 (with scribe lane) including the attached test part.At last, after testing the fabricated chip, the results show that the anterior part works well. The chip can work with 2.5～6 Voltage and the received angle is±45°. In sunny days the indoor received distance is about 15 meters, less than common products in market. It can work well in the sunlight and inverter fluorescent lamps.The chip will bring economic interest. By now, we need to handle the problem about the short received distance.