Research On Interface Characteristics Of Strained Silicon MOS

In this paper,the Strained Si/SiO₂ interfacial characteristics are systemicallyinvestigated in detail.The model among gate voltage and inversion layer carrier concentration is built bytaking Common strained silicon surface channel MOS device structure. Through theanalysis of this model to study the strained silicon MOS capacitance-voltagecharacteristics. The results show that the strain Si / relaxed Si_1-xGe_x heterojunctionenergy band differential would limit the formation of electrons and holes ,at roomtemperature, the C-V curves of strained Si MOS appears a " step "phenomenon in theinversion region or depletion region, this" step " phenomenon is changed by epitaxiallayer doping concentration changes of the strain Si / relaxed Si_1-xGe_x epitaxial layer.Through the results of high-frequency C-V results of Strained silicon MOS,in-depth discussion of the strain Si/SiO₂ system interface charge, points out thecharacteristics of the interface also shows the improvement measures. Finally, throughthe bulk silicon MOS high-frequency capacitance measurement method improvementand correction, measured and calculated strain Si/SiO₂ interface, the interface statedensity.A comprehensive Semi-empirical model for inversion channel electron mobility ofStrained Si n-MOSFET is proposed on the basis of semiconductor devicephysics.Effects of lattice,ionized impurities,surface phonon,interface charges andsurface roughness scatterings on the mobility are considered in this model,where theinterface-charge scattering mechanism includes electrically-shielded effect ofcarriers.Finally, the simulation results and experiment has a very good match by usingsoftware of Matlab simulation. The model can be used to study and analyze influencesof interface characteristics on electron mobility and is also a basis of circuit simulationsin the future.