Gallium nitride - Globe Thesis

Keyword [Gallium nitride] Result: 181 - 200 \| Page: 10 of 10
181.	Linearization techniques for integrated CMOS power amplifiers and a high efficiency class-F gallium nitride power amplifier
182.	Gallium Nitride Nanostructured Power Semiconductor Device
183.	Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors
184.	Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors
185.	Growth of nitrogen-face gallium nitride by MOCVD
186.	Enhancement-mode gallium nitride-based HEMTs for high-voltage switching applications
187.	Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy
188.	MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires
189.	Thermally stable Ohmic and Schottky contacts to gallium nitride
190.	Near infrared wavelength absorption due to intersubband transitions in gallium nitride/aluminum nitride superlattices
191.	Noise of aluminum gallium nitride/gallium nitride HEMTs and oscillators
192.	Growth, characterization and device processing of gallium nitride metal oxide semiconductor field effect transistor (MOSFET) structures
193.	Distributed effects in power transistors and the optimization of the layouts of aluminum gallium nitride/gallium nitride HFETs
194.	Proton radiation and thermal stability of gallium nitride and gallium nitride devices
195.	Temperature dependent analytical modeling, simulation and characterizations of HEMTs in gallium nitride process
196.	A gallium nitride-based microcavity emitter fabricated using photoelectrochemical etching
197.	Low frequency noise of gallium nitride-based deep ultraviolet light emitting diodes
198.	Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices
199.	Modeling and simulation of gallium nitride-based high electron mobility transistors
200.	The heteroepitaxial growth of semipolar gallium nitride for light emitting diodes
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