Gallium nitride - Globe Thesis

Keyword [Gallium nitride] Result: 161 - 180 \| Page: 9 of 10
161.	Gallium nitride based heterostructure growth and application to electronic devices and gas sensors
162.	Wafer-fused aluminum gallium arsenide/gallium arsenide/gallium nitride heterojunction bipolar transistors
163.	Gallium nitride class-F power amplifier for UMTS/WCDMA applications
164.	Development of gallium nitride-based ultraviolet detectors
165.	Growth and fabrication of gallium nitride and indium gallium nitride-based optoelectronic devices
166.	Increased light extraction and directional emission control in gallium nitride photonic crystal light emitting diodes
167.	High-efficiency switching-mode class E power amplifier using gallium nitride power transistor
168.	Ohmic metallizations to aluminum gallium nitride/gallium nitride high electron mobility transistors: Electrical and microstructural studies
169.	Effect of defects on the electrical/optical performance of gallium nitride based junction devices
170.	Development of fabrication processes for silicon and gallium nitride photonic crystal structures
171.	Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs
172.	Aluminum gallium nitride/gallium nitride based HEMT structures and applications
173.	A study of electroluminescence produced by aluminum gallium nitride/gallium nitride high electron mobility transistors
174.	Modeling of gallium nitride high electron mobility transistors
175.	Modeling of gallium nitride-based light-emitting diode for uniform current spreading
176.	Gate-recessed gallium nitride high electron mobility transistors with scaled gate length
177.	Development of gallium nitride MOSFET growth and processing technology
178.	Investigation of ohmic contacts for gallium nitride-based power electronic devices using molecular beam epitaxy
179.	Oligonucleotide guanosine conjugated to gallium nitride nano-structures for photonics
180.	Optimization stability of gate dielectrics on gallium nitride
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