Study On Performance Of Molybdenum-based Photoelectric Synapses And Resistive Memory

With the failure of Moore’s law,the traditional von·Neumann architecture system is facing challenges.Amnesic resistors have the potential to overcome the bottleneck of von·Neumann architecture in the direction of neuromorphic systems as well as non-volatile memories.In the direction of neuromorphic systems,compared to electrical synaptic devices,optoelectronic synaptic devices have the potential to integrate optical signal sensing,processing and storage in a single device,exhibiting lower power consumption and larger bandwidth;in the direction of non-volatile memory,resistive memory has the advantages of fast response,high integration and simplicity of architecture.However,there are still problems of poor reliability in practical functional applications,i.e.,large dispersion of operating voltage distribution and non-uniform distribution of high and low resistance values.Therefore,a new process approach is needed to improve the performance parameters of the devices.Molybdenum oxide semiconductor materials possess unique optical and electrical properties and have potential applications in many scientific fields such as solar cells,electrochromic,and catalysis.Therefore,this paper is based on molybdenum oxide thin film,and the main research contents of this topic are as follows,in order to meet the research needs in the field of optoelectronic neurosynaptic and to improve the performance of resistive memory:1.Study of optoelectronic neurosynaptic properties of MoO_x thin film:In this paper,optoelectronic neurosynaptic devices with ITO/MoO_x/Pt structure were prepared by magnetron sputtering technique using molybdenum oxide thin film as the light-sensitive functional layer.It was demonstrated that the device can simulate short-term memory,long-term memory,short-term memory to long-term memory transition,double pulse facilitation.The prepared molybdenum oxide based optoelectronic synaptic devices can integrate information detection and storage,which can help reduce device power consumption and crosstalk and improve the computational power of data and information.2.The performance of MoO_x thin film resistive memory is studied:firstly,the optimal performance of ITO/MoO_x/Pt structure resistive memory is obtained by changing the oxygen partial pressure and thickness of the film.To further improve the device reliability,a convenient and economical solution is proposed to improve the device performance by using a low-temperature fast thermal annealing process.Electrical characterization tests show that the devices have self-limiting and Forming-Free characteristics after treatment in vacuum atmosphere(300℃,120s).The device has a HRS/LRS ratio of>10~3,a more uniform operating voltage,suppressed dispersion of high resistance(HRS)and low resistance(LRS),a lifetime of over 10~4 seconds(85℃)and statistical switching performance(>10,000 cycles).