| With the development of integrated circuit technology and the expansion of application fields,it has become one of the important areas of international competition.However,with the widespread use of integrated circuit products,the problem of heat dissipation of electronic components is becoming increasingly prominent,and LED is a typical example.LEDs have become the most important lighting device by its excellent luminous efficiency.But its unique structure means that heat dissipation from the chip can only be achieved by conduction.The insulating thermal conductivity layer becomes a bottleneck in the heat transfer of the chip,seriously affecting its lifetime and reliability.The characteristics of cubic boron nitride include good thermal stability,high thermal conductivity,large band gap,and oxidation resistance,making it a potential insulating and heat dissipating material.This paper investigates the application of cubic boron nitride in LED heat dissipation based on its insulating and thermal conductivity.Firstly,we studied the preparation of cubic boron nitride films on Si substrates by biased RF magnetron sputtering.Then we investigated the effects of preparation conditions such as sputtering power,substrate bias,substrate temperature,air pressure and substrate type on the deposition quality of the films.Finally,a set of parameters suitable for the growth of cubic boron nitride films was summarized to achieve stable preparation of c-BN films with high purity and a boron-to-nitrogen ratio of 1.37 for cBN.Secondly,based on the prepared cubic boron nitride films,we conducted a study on the promotion of LED heat dissipation and enhanced luminescence by cubic boron nitride films.From the temperature and luminescence results,the cubic boron nitride films can effectively promote chip heat dissipation and significantly improve the light output power and electro-optical efficiency of LEDs compared with the control group.At an input power of 9 W and higher,c-BN reduces the maximum temperature of the LED array by approximately 5 to 14℃ compared to Si and increases the light output power of the LED chip array by 14.7% to 28% compared to Si.The high thermal conductivity of the cubic boron nitride film shows its great potential in improving the heat dissipation problem of LED beads. |
