| In recent years,the rapid development of new energy,spintronics,and space detection technologies have promoted the development of photocathode performance.NEA photocathodes represented by Ga As cannot meet the demand for detection in the short infrared band,so it is necessary to conduct research on new photocathode materials to enhance the utilization of night sky light resources.Narrow-band semiconductor materials with small effective mass of electrons,high electron mobility and long carrier lifetime are excellent functional materials for infrared photoelectric information.The night sky light radiation wavelength range from the short infrared band to part of the visible light are distributed,its peak and the main radiation energy mainly exists in the short-wave infrared band,near infrared band,in which a small part of the distribution in the mid-infrared band,in the micro-light night vision technology has the potential application value,can improve the photocathode spectral response width and the night sky light resource matching rate,so as to improve the sensitivity of the micro-light night vision sensor It can enhance the spectral response width of photocathodes and the matching rate of night sky light resources,thus to improve the sensitivity of micro-optical night vision sensors and widen the visual range.In this paper,the transmission NEA-Ga As photocathode is simulated and modeled using Silvaco TCAD software.The probability P of photoelectron transmission through the interfacial barrier of the photocathode is solved by using the quantum effect principle and Schr?dinger’s equation,and is verified to be in good agreement with the experimental results.After that,two single heterojunction short-wave infrared threshold field-assisted photocathodes with P-Ga Sb/P-Ga As and P-In As/In As P/P-In P/Ag four-layer structures were designed and their characteristics were simulated.The heterojunction conduction band barrier is eliminated when the bias voltage reaches 8 V and 10 V,respectively;the quantum efficiency of the structure-optimized P-Ga Sb/P-Ga As photocathode photoelectron emission performance is above 5%,and reaches more than 10% in the short-wave infrared band with a peak of 13%.the spectral response range of P-In As/In As P/P-In P/Ag photocathode extends to 3400 nm,and the quantum yield reaches up to 1.3%,which improves the utilization of the night sky light resource in the short infrared band. |
