Research On Organic Field-Effect Transistor Memory Based On F4-TCNQ

With the advent of the information explosion era,the demand for data storage and processing in electronic devices has been increasing.As Moore’s Law approaches its limits,organic field-effect transistor（OFET）memory devices have gained considerable attention.In the fabrication of OFET memory devices,interface engineering plays a crucial role,and methods such as adding functional layers,modifying layers,and solution processing are important for optimizing device performance.This paper is based on PS-based bottom-gate/top-contact OFET memory and introduces a small molecule semiconductor,F4-TCNQ,with high electron affinity as a functional layer to improve device structure and achieve performance modulation.Furthermore,the device structure is optimized through solution processing.The main research achievements and content are as follows:1.F4-TCNQ is deposited on a PS thin film as a buffer layer between the dielectric layer and the active layer.OFET memory devices are fabricated by vacuum thermal evaporation of organic pentacene and electrode deposition.The device performance can be controlled by the deposition time of the F4-TCNQ buffer layer,with the highest carrier mobility of 0.65 cm2V?1s?1 obtained at a deposition time of 420 s.The device exhibits a storage window of approximately 18 V and maintains good current on/off ratio stability after a sustainment test of over 10? s.It also demonstrates stable current on/off switching behavior in approximately 70 read/write/erase cycles.2.F4-TCNQ is deposited on SiO₂ as a floating gate layer,and after spin-coating PS on top,organic pentacene and electrode layers are thermally evaporated to fabricate the OFET memory device.The storage performance of the device can be controlled by the deposition time of the F4-TCNQ floating gate layer.The device exhibits a maximum storage window of 30 V and the highest carrier mobility of 1.06 cm2V?1s?1 at a deposition time of 150 s.It maintains good current on/off ratio stability after a sustainment test of over 10? s and exhibits stable current on/off switching behavior in approximately 80 read/write/erase cycles.3.OFET memory devices are fabricated using a thin film prepared by spin-coating a mixture of F4-TCNQ and PS as the charge storage layer.The device with an F4-TCNQ/PS mass ratio of 1:5shows the best performance.It exhibits a carrier mobility of 0.54 cm2V?1s?1 and a storage window of approximately 21 V,with gate biases for read,write,and erase operations not exceeding 30 V.Furthermore,the device maintains good current on/off ratio stability after a sustainment test of over10? s and shows stable current on/off switching behavior in over 102 read/write/erase cycles.