Photoelectric Organic Neuromorphic Transistor Memory Based On Nanopore Patterning Engineering

In recent years,the neuromorphic devices have been developed to overcome the problem of information processing delay and high-power consumption in the traditional von Neumann architecture.Among them,the three-terminal organic neuromorphic transistor memory is similar to that of biological synapses,which contributes to realize signal transmission and learning functions.In addition,the high flexibility,extensibility and solution processability of organic materials render the device more convenient for hardware implementation of neuromorphic computing.Eyes are the most important sensory organ for humans,as about 80 % of knowledge and memory in the brain is acquired through vision.When photoreceptor cells in the retina detect light signals,they convert the incoming light signals into electrical signals and preprocess them.The organic neuromorphic transistor memory can control channel conductance through external optical stimulation,demonstrating potential advantages in the field of analog optic nervous system.Although the simulation of human visual function by optical transistor memory has been widely reported,the more complex visual function simulation and deep mechanism is still blurry,limiting the exploration of complex neural behavior.This thesis focuses on the study of organic neuromorphic transistor memory based on porous pattern engineering,and explores the influence of the morphological characteristics and photophysical properties changes on the charge transport behavior and photogenerated exciton transport behavior under porous pattern engineering,and then expand to the impact on the storage performance,synaptic plasticity,visual simulation applications,etc.The main research contents and results are as follows:(1)To explore the effect of porous patterning engineering on the charge-trapping ability of organic neuromorphic transistor memory.Firstly,the most suitable preparation method was selected and optimized by comparing different preparation processes.Further exploration of the morphological characteristics and photophysics of porous films revealed that the porous patterning engineering could increase the contact area of the film surface and increase the photoabsorption rate of the film.At the same time,it was also found that the porous films had the characteristics of self-templating.This study provides a new regulatory strategy for the realization of high-performance organic neuromorphic transistor memory,and lays a foundation for further exploring the influence of pore patterning engineering on the performance of light regulation.(2)To explore the effects of porous patterning engineering on light-regulated storage and lightregulated synaptic plasticity of organic neuromorphic transistor memory(neuromorphic transistor memory).The experimental results reveal the modulation effect of the double porous interface on the channel current.The porous array at the source leak electrode/pentacene interface can promote the generation and dissociation behavior of photogenerated excitons and improve the transient optical response.The porous array at the pentacene /PVK interface increases the injection efficiency of photogenerated electrons,promotes the recombination of photogenerated electron-hole pairs under the action of the reverse electric field,and increases the attenuation amplitude.This contradictory effect is balanced under the stepwise light intensity stimulation,which makes the organic neuromorphic transistor memory realize the light intensity adaptation function.It provides a universal strategy for improving the optical response of organic neuromorphic transistor memory.(3)To investigate the effect of porous patterning engineering combined with CsPbBr3 QDs nanofloating gate on the performance of organic neuromorphic transistor memory.The introduction of CsPbBr3 QDs nanofloating gates can improve the photoresponsiveness under low light.At the same time,the porous patterning engineering can increase the contact area and provide more exciton trapping,dissociation and charge injection sites,thus further amplifying the photosensitivity and photoresponsiveness.Based on the excellent utilization and dissociation rate of photogenerated excitons,the perovskite quantum do T-based porous organic neuromorphogenetic transistor memory has excellent low-light response,and can realize the vision application of low-light imaging.