Study On The Performance Of Metal Oxide Thin Film Transistor And Device Prepared By Patterning Control

As people enter the information age and electronic devices are gradually upgraded,the performance of display components must also meet the needs of the industry,of which thin film transistor（TFT）,as an important part of the screen display,is receiving more and more attention,and the demand for TFT performance is gradually increasing.Metal Oxide Thin Film Transistor（MOTFT）has great potential to improve performance and stability because of its advantages such as good uniformity,stability and relatively high carrier mobility.Nowadays,the main methods for preparing MOTFT are traditional vacuum deposition techniques,which are used to prepare films with high quality and good uniformity of densities,but these traditional vacuum preparation techniques require expensive and complex vacuum deposition system support,and their maintenance and renewal costs are also high.Compared with it,the solution method has the advantages of environmental friendliness,simple preparation process,and large area preparation,which has gradually become a research hotspot for TFT preparation technology.In this paper,based on the solution method,two preparation methods,spin coating and inkjet printing technology,are used to compare the electrical properties of different structured thin film transistors and optimize them to obtain high performance thin film transistors,as follows:（1）Preparation of TFT devices with InGaZnO（IGZO）as the active layer material.The IGZO films were prepared experimentally using spin-coating method and the electrical properties of IGZO-TFT were compared at different thicknesses and temperatures.The high performance ratio of IGZO precursor solution was first configured,and the molar ratio of In:Ga:Zn in the precursor solution was determined to be 2:1:7 for high quality films.the effect of different annealing temperatures on the electrical properties of IGZO-TFT devices prepared by the optimal ratio of precursor solution was explored,and the optimal annealing temperature was determined to be550℃.the effect of the active layer film thickness on the electrical properties of TFT devices was also explored.It was found that the best electrical performance of the device was achieved with the active layer film thickness of 38 nm,and the switching ratio of the device reached 6.4×10⁶ with a threshold voltage of 4.3 V.（2）TFTs with different electrode shapes were prepared by the solution method,and the effect of electrode shapes on device performance was verified on different substrates.The experiments were conducted on Si/Si O₂ substrate and ITO/Hf O₂substrate to prepare circular electrode structure and conventional rectangular electrode structure TFTs,and the same preparation process and test conditions were used to study the electrical properties of different devices.It is determined that the solution method can effectively reduce the surface roughness of the gate dielectric layer,which helps to reduce the scattering of carriers at the interface and further improve the carrier transport capability in the TFT device channel.（3）The TFTs with different electrode structures can be prepared based on inkjet printing technology,and the optimal annealing conditions for printing the active layer are explored.The experiments solve the problem of active layer rupture caused by volatilization of organic materials by stepwise annealing.Then,we design the electrode patterns,print and prepare TFTs with forked finger electrode structure and TFTs with semicircular electrode structure,and compare the rectangular symmetric electrode structure prepared by inkjet printing,and establish that the patterned regulation of electrodes can effectively improve the electrical performance of the devices,and the device performance can be improved by increasing the aspect ratio and optimizing the device edge angles,which can facilitate more uniform field intensity distribution.