Research On 33-37GHz High Power GaN Power Amplifier Chip

Due to the rapid development of wireless communication technology,the current wireless communication system has fully entered the 4G era.Power amplifier is the most important link in modern wireless communication engineering,as this module is the most difficult part to design in communication system technology.There is a huge gap in the performance of different power amplifiers,so an excellent power amplifier directly determines the excellence of the communication system.Gallium nitride(Ga N)has become a research hotspot because of its advantages such as bandgap,high electron mobility and high potential barrier.At the same time,a large number of communication systems operate in the low frequency range,making the low frequency market tend to be saturated.Therefore,power amplification devices operating in the high frequency range have become a research feature.This article will design a Ga N power amplifier chip that operates in the Ka band(27-40GHz),with the main tasks as follows:The paper analyzes the development history and market trends of power amplifiers,compares the performance of mainstream power amplifier materials and the development process of power amplifiers based on Ga N materials,discusses the advantages and characteristics of Ga N materials,and analyzes the parameter definitions for designing power amplifier circuits as the basis for power amplifier design in the following text.Discussed the production process of power amplifier chips,the core idea of designing power amplifier chips,and tested the physical performance of the chips.The circuit design section is divided into single-stage circuit design and multi-level circuit design.Firstly,appropriate transistors are selected,their circuit structure is adjusted,ports are matched,and interstage capacitance and resistance are added to improve their stability and output efficiency.The output power is optimized to test the performance of the transistor core and calculate the power density of the transistor core.Based on this,the structure of the multi-stage amplification circuit is designed and the turn width of the transistor core is determined.On the basis of determining the single stage matching,a multi-stage amplification circuit was designed.The amplifier adopts a three-level amplification structure.After electromagnetic field simulation verification,the power amplifier circuit has an output power greater than 20 W in the working frequency band,an additional power efficiency greater than 30%,and a final layout area of 3.6mm × 3.1mm。 After chip casting,the bare chip test shows that when the input signal power is 16 d Bm,the output power is 20 W,and the power additional efficiency is greater than 30%,which is consistent with the simulation results.Further design the cavity circuit,place the power chip into the cavity,and test the chip performance in the actual circuit.After considering the circuit power loss,the output power,efficiency,and bare chip test results are basically consistent,verifying the practicality of the power chip.