Numerical Simulation Analysis Of SiC Single Crystal Growth Based On PVT Method

Silicon carbide single crystal(SiC)is a well-known material with excellent performance in critical areas.Over the years,it has developed from a high potential wide-bandgap semiconductor to a widely utilized material in vital fields such as electric power,5G communications,and renewable energy sources.Silicon carbide particularly high physical properties,such as high breaking area power,high thermal chalketia,and high-speed frequency electron centrifuge rates,render it an essential substrate material for energy-efficient applications at the electronic device and system level.Low cost,large size and defect free are the biggest challenges for growing SiC single crystals.The physical vapour phase transport(PVT)growth method has now proven suitable for growing SiC single crystals.The PVT method for growing SiC single crystals is heated in a medium frequency induction furnace and grown in a closed graphite crucible at temperatures of up to 2200℃ or more.Existing inspection methods cannot observe the growth inside the graphite crucible in real time,while silicon carbide single crystals have long growth cycles and high trial and error costs.So,to choose a processor of SiC crystal development process by PVT,it is necessary to revise the experience through numerical analysis,to perform computer simulation experiments,and to visualise the internal physical field distribution to guide the optimisation of process parameters.This paper firstly introduces the crystal structure and physical properties of silicon carbide,as well as the current state of industrial development and fundamental theory related to the growth of silicon carbide single crystals using the PVT method.Subsequently,a finite element method has been used to investigate the growth process of PVT-based silicon carbide single crystal by computer numerical calculation.simulation software.According to the crystal growth method,the design of the whole system,the inhalation heating system and other technical process requirements,we will analyze and discuss various factors affecting the growth of silicon carbide single crystal and the quality of single crystal products.Effective through numerical experiments.The main results of the research are:1.Based on the basic geometric dimensions of the long-crystal system and the material parameters of the components,a mathematical model of the physics used for the analysis was developed.and mechanism of the PVT furnace for growing SiC single crystals,and boundary conditions were set.A multi-physics numerical simulation system was constructed using finite element software to analyze the process of SiC single crystal growth.2.Electronic magnetic and thermal areas have joined a system to study crystal development systems.The effects of applied current strength,frequency magnitude,coil position and coil turns on the electromagnetic field distribution and temperature distribution induced by induction heating system are studied,and a reasonable range of values is obtained.3.Under reasonable magnetic and thermal field conditions,the influence of the size and shape of the silicon carbide polycrystalline powder on the growth rate and the growth quality of SiC crystal development was investigated using the flow fieldtemperature field coupling model,and a reasonable optimization direction is given.