Performance Optimization And Optoelectronic Regulation Of Hafnium Oxide Memristive Devices

With the continuous upgrading and popularization of technologies such as artificial intelligence and the Internet of Things,global data is growing explosively.Large amounts of data are frequently exchanged and processed between processors and memory,the computing architecture of the information memory unit and the computing unit are separated seriously limits the computing performance of the processor.Memristor has become one of the most important integrated memory and computing devices because of their good non-volatile storage and logic computing functions,as well as high speed,low power consumption,and compatibility with CMOS process.However,the randomness from the shape of the conductive channel and the position of formation and rupture leads to poor uniformity of memristor,which seriously limits its industrial application.Therefore,the modulation of conductive channel is the primary key scientific and technical issue for optimizing device performance.In this paper,electrodes,quantum dots,and optoelectronic hybrid operations are used to control the formation of conductive filaments to optimize the performance of Hf O_x-based memristor.The influence of light on the consistency and stability of quantum dot Hf O_x-based device was explored by introducing light regulation,and realized demodulation function of the light intensity information and the AND gate logic.The main research contents are as follows:(1)Electrode optimization of performance in the Hf O_x-based memristor.By exploring the influences of different electrode materials(Pt/Ti N/Ti)on the Set voltage,high and low resistanceand the window of the Hf O_x-based memristor,the performance of the Hf O_x-based memristor was optimized,the Ti/Hf O_x/ITO device exhibits performance.(2)CdSe quantum dots optimize the resistive switching performance of Hf O_x-based memristors.The purpose of improving the consistency of hafnium-based memristors is achieved by introducing quantum dot.The influence of quantum dot concentration on device consistency was explored and the memristive properties of the device were optimized including Set voltage range,high/low resistance,window value,and retention characteristic.(3)Research on optoelectronic hybrid control of quantum dot Hf O_x-based memristor.The light response characteristics of quantum dot devices to different wavelengths were explored,and then the memristive properties of quantum dot Hf O_x-based devices were optimized,and the light intensity information demodulation function of Hf O_x-based quantum dot devices in AND gate logic was realized.