Research On The Application Of Inkjet-printed Electrodes Technology In Metal Interconnection And Memristor

As an emerging device fabrication technology in the field of electronic products manufacturing,inkjet printing has attracted more and more scientific researchers’attention due to its advantages such as fast fabrication speed,low cost,no contact with the substrate,and simple process.After continuous exploration,inkjet printing has been maturely applied to the fabrication of various electronic devices,such as organic lightemitting diodes,solar cells and so on.However,as a late-starting pattern design and material deposition method,inkjet printing still has some problems to be solved in terms of technology and process flow,such as the reliability of printed conductive materials,the uniformity of film formation,etc.And the application potential of inkjet printing in electronic device manufacturing still needs to be further explored.In this thesis,the reliability application of inkjet printing technology in laboratory electronic connection lines,the role of inkjet printing technology as an auxiliary connecting electrode in SThM characterization of memristor,and the fabrication of silver electrodes in memristor structure by inkjet printing technology are studied.The first work is to systematically explore the reliability of silver conductive wires fabricated by inkjet printing as metal connecting wires in electrical devices by comparing metal wires fabricated by different techniques.Specifically,the electrical properties of the silver wires fabricated by inkjet printing,the gold wires fabricated by wire bonding,the gold wires and the silver wires fabricated by traditional photolithography combined metal deposition were characterized respectively.The resistance and the maximum current that metal wires can withstand is compared and analyzed.The results show that the inkjet-printed silver wire has low resistance,high stability and good performance,which has a good application prospect in the laboratory electronic device connection,especially for the emerging flexible electronic research.It is more advantageous to fabricate conductive paths on flexible substrates by inkjet printing with fluid metal inks.At the same time,this project also provides a good solution for some problems in the experiment of wire bonding.The second work is to explore the resistive switching mechanism of memristor using inkjet printing technology as conductive path connecting lines to assist scanning thermal microscopy(SThM)characterization.Specifically,the SThM characterization of the structural unit of the memristor is carried out.Because of the need to use an external circuit to apply in-situ pressure to the small size memristor during scanning thermal microscopy characterization,but the size of the traditional memristor is only in micron level(and with the development of technology it will be more and more smaller),inkjet printing technology was used to connect the small size electrode to the large size electrode printed to facilitate the external circuit.By analyzing the scanning heat distribution map of the device under the action of an electric field,the location of the resistive switching phenomenon(such as the formation and fracture of conductive filaments)and the characteristics of the structure size and other characteristics can be determined,and the effective area of the memristor during the resistive switching process was successfully observed.The appearance of local hot spots provides strong support for the conductive filament hypothesis that there is a large temperature change locally.This work provides a strong evidence and a characterization method for analyzing the dynamic behavior of the resistive switching behavior at the nanometer scale and also provides a good application direction for inkjet printing as an electronic connection wire in the first work.The third work is to fabricate the top and bottom electrodes of the memristor by inkjet printing by using silver nanoparticles ink,in which the intermediate resistive switching layer is TiO2 fabricated by atomic layer deposition(ALD).The electrical characterization proves that this liquid phase fabrication technique can successfully fabricate memristor devices with similar performance to the photolithographic process combined with traditional metal deposition method,which is very useful for the fabrication of most electronic devices in the laboratory.