Performance Simulation And Optimization Of FaSnI₃ Solar Cells Based

In recent years,perovskite solar cells have been widely concerned by researchers in the field of photovoltaic.Since its introduction in 2009,perovskite solar cells have attracted much attention.Due to its wide spectrum response range,long carrier propagation distance and solution preparation,it has attracted wide attention in the field of optoelectronics.As lead is a toxic heavy metal element,it will cause serious environmental pollution once put into use,which restricts the development of such batteries.The ion radius and electron configuration of tin and lead are very similar,and the stann-based perovskite material has relatively low toxicity,and it will degrade into environmentally friendlySnO₂in the air.More importantly,stann-based perovskite also has excellent photoelectric performance,which makes it the most promising material to replace lead based perovskite.In order to explore efficient and stable solar cells,this paper uses SCAPS solar cell capacitor simulator software to theoretically simulate FaSnI₃perovskite solar cells,and explores the influence of material parameter changes of the hole transport layer and electron transport layer of the cell on the cell efficiency.The details are as follows:1.The FaSnI₃solar cells with hole transport layers of CUI,PEDOT:PSS and CU₂O were studied by using the solar cell capacitance simulator SCAPS.The initial model was constructed with PEDOT:PSS as the hole transport layer,and the thickness of FaSnI₃layer was 300nm.The analysis results show that when the hole transport layer of FaSnI₃solar cells changes,its performance will also change,and the filling factor and photoelectric conversion efficiency are improved compared with that of the original model.The optimal FaSnI₃thickness and efficiency for solar cells using hole transport layers of different materials are:（1）CUI:When the thickness is500nm,the optimal efficiency is 13.38%（2）CU₂O:When the thickness is 500nm,the optimal efficiency is16.29%（3）PEDOT:PSS:When the thickness is 600nm,the optimal efficiency is12.45%.Compared with the established initial model,both CUI and CU₂O as hole transport layer can improve the photoelectric conversion efficiency of FaSnI₃cells.CUI,PEDOT:PSS and CU₂O,as the hole transport layer,gradually increase the hole mobility from 0.001cm².vs^-1to 100cm².The results show that with the increase of hole mobility from 0.001cm².vs^-1to 100cm².vs^-1,the filling factor and photoelectric conversion efficiency of FaSnI₃solar cells with three different materials do not change and tend to be stable when the hole mobility is greater than 1cm².vs^-1.The FaSnI₃solar cell with electron transport layer of PCBM,SnO₂and Ti O₂was studied by using the solar cell capacitance simulator SCAPS.Other layer materials and parameters remain unchanged,change the electron transport layer material.Compared with the solar cells with Ti O₂as electron transport layer,the performance of the single junction FaSnI₃solar cells with PCBM and SnO₂as ETL has been improved.When PCBM is used as ETL,FaSnI₃solar cells have the best performance,and the photoelectric conversion efficiency has increased by 4.78%compared with the initial.By adjusting the electron mobility of the electron transport layer,it is concluded that when PCBM and SnO₂are used as ETL,compared with Ti O₂ETL solar cells,the increase of FF and PCE is not directly related to the electron mobility.FF and PCE of the three materials all tend to be stable when the electron mobility is 1.0cm².vs^-1,is not affected by mobility.