Research On Radiation Damage Of CLYC Scintillation Detector Based On Silicon Photomultipliers

With the continuous development of science and technology,Silicon Photomultipliers(SiPM),as a new type of photoelectric conversion device,is gradually replacing photomultiplier tubes and becoming the preferred photodetector in the field of particle detection.Among them,SiPM has been widely concerned due to its advantages of high gain,high sensitivity,and fast response.It has smaller size and lower voltage operation requirements.When coupled with Cs2LiYCl6:CE(CLYC)scintillation crystal to form a CLYC detector,it can be The function of neutron/gamma dual detection in miniaturized instruments,as well as higher spatial resolution and time resolution.However,in the application scenario of SiPM in ray detection,SiPM will be subject to certain radiation,and this radiation damage will lead to performance degradation of SiPM.In this paper,the main parameters of SiPM were measured before and after irradiation,and the changes in energy resolution and pulse shape discrimination(PSD)were analyzed when they were used as CLYC detectors.The main work of this paper:1.Understand the mechanism of SiPM radiation damage,analyze the reasons for the performance change of SiPM after radiation damage,compare the specific effects of body damage and surface damage on SiPM,and the principle of SiPM annealing treatment.2.The development of the detector is mainly divided into the selection of SiPM,the determination of the CLYC crystal shape,the design of the detector preamplification circuit,and the test of the energy response of the detector.3.Carry out neutron irradiation experiments,by exposing SiPM devices and CLYC scintillation crystal detectors to a fast neutron field of 14MeV,focusing on the dark count rate,dark current,and breakdown of SiPM before and after different fluence irradiation Parameters such as voltage and quenching resistance,as well as the changes and reasons for the detection performance of CLYC detectors.After the irradiation experiment,the SiPM and CLYC detectors were annealed at room temperature to study the recovery of SiPM device parameters and detector performance.The performance of SiPM and CLYC detectors gradually deteriorates with increasing neutron fluence.For SiPM,the main performance is the increase of dark count rate and dark current.For CLYC detectors,the main performance is the reduction of energy resolution.The annealing process helps to mitigate the effects of neutron irradiation and restore some of the performance of SiPM and CLYC detectors.Overall,the research work in this paper can provide important data for the establishment of a method for testing and evaluating radiation damage of scintillation detectors based on SiPM,and provide an important reference for the application of CLYC detectors in fast neutron radiation detection and imaging.The study of various parameter changes provides important information on the effect of neutron irradiation on the detection performance of these devices,and the annealing process after irradiation provides an effective way to restore the electrical properties of the detector and maintain its optimal performance.