Font Size: a A A

Modification Of Two-Dimensional WS2 Atomic Crystals By Thermal Evaporation Assisted CVD Method

Posted on:2024-03-30Degree:MasterType:Thesis
Country:ChinaCandidate:J H WangFull Text:PDF
GTID:2531307166975499Subject:Materials and Chemical Engineering (Professional Degree)
Abstract/Summary:PDF Full Text Request
Two-dimensional transition metal dichalcogenides(TMDCs)as a new type of two-dimensional nanomaterial have attracted widespread attention due to their unique structure and excellent optoelectronic properties.Tungsten disulfide(WS2)is a typical representative of TMDCs,with features such as high luminescence efficiency and narrow emission peak,exhibiting great potential in many fields,especially in the research of WS2 modification through doping,heterostructures,etc.,which has been a research hotspot in recent years.However,controlling the modification of WS2 remains a significant challenge,making it crucial to seek a universal and straightforward modification method.In this study,a synthesis strategy of the thermal evaporation-assisted chemical vapor deposition(CVD)method was proposed to modify two-dimensional WS2,mainly achieving controllable preparation of doped and heterostructured WS2,including the following three parts:1.Preparation of WOx nanowires as precursors to achieve the controllable synthesis of WS2.Using the thermal evaporation method to prepare low-melting WOxnanowire structures as tungsten sources,high-purity,high-quality,large-area single-layer WS2 was controllably synthesized through CVD.2.Incorporating the dopant source into the tungsten source to achieve high-concentration doping of WS2.WxVyOz nanowires were prepared as precursors through thermal evaporation,and V-doped WS2 was synthesized through CVD method.The influence of different factors on the experimental results was studied,and finally,controllable preparation of V-doped WS2 was achieved.Analysis and characterization of its electrical properties showed that with the doping of V,the photoluminescence of WS2 was quenched,and the carrier type changed from n-type to p-type.Meanwhile,Nb-doped WS2 was also studied,demonstrating the universality of using metal oxide nanowires as precursors to prepare doped WS2.3.Constructing a precursor with a core-shell structure to prepare heterostructures.This study used a two-step thermal evaporation method to prepare WOx/Re Oxnanowires with a core-shell structure as precursors,and WS2/Re S2 heterostructures were prepared through CVD method.The morphology and structure of the heterostructure were characterized,proving the feasibility of this strategy in constructing heterostructures.
Keywords/Search Tags:Nanowires, Chemical vapor deposition, WS2, element doping, Heterojunction
PDF Full Text Request
Related items