ITO Transparent Conductive Film Structure Egulation And Performance Study

Transparent conductive oxide（TCO）films with low resistivity and high optical transmittance are key components of optoelectronic materials and devices such as flat panel displays,touch screens,light emitting diodes and solar cells,among which the most widely used TCO is indium tin oxide（ITO）films.In recent years,due to the rapid development of large-size touch panels,large-size high-definition LCDs and other optoelectronic devices,higher requirements have been put forward for the visible light transmission rate and resistivity of ITO thin films.The optoelectronic properties of ITO thin films depend on the structure of ITO thin film materials.In this paper,ITO thin films with different selective orientations were prepared by DC sputtering,and the structure and In this paper,we obtained（400）ITO films with excellent optoelectronic properties.By using co-sputtering technology,the optoelectronic properties of ITO films are further improved by optimizing parameters such as indium to tin ratio.The silver nanowires were prepared by polyol method,and the composite films with high visible light transmittance,high conductivity and low thickness were deposited by the method of silver nanowires and ITO to realize the regulation of the optoelectronic properties of ITO films.The main work and research results of this paper are as follows:（1）ITO films with different selective orientations were prepared on glass substrates by DC sputtering,and the tuning of（211）,（222）,（400）and（440）selective orientation ITO film deposition was achieved.The influence of process conditions on the ITO film selective orientation was systematically investigated,and the growth mechanism of ITO film selective orientation was analyzed by surface energy calculations.The surface energy calculation proves that the growth mechanism of ITO thin films is related to the surface energy of ITO thin films.Different preparation processes result in different sputtering energies,and higher sputtering energies contribute to the formation of planes with higher surface energies and the formation of meritively oriented films.The（400）selectively oriented films with the highest surface energy have good average visible light transmission（87.1%）as well as excellent electrical properties(ρ=2.633×10^-4Ω·cm).The ITO films with In₂O₃:Sn O₂=8.02were deposited by co-sputtering method,and the ITO films deposited by co-sputtering method have a mass ratio closer to the optimum value compared with the common single-target DC magnetron sputtering method,which reduces the waste of In resources to a certain extent,and makes the electrical properties of the films improved by 32%.（2）Ag NWs with high aspect ratio were prepared by a polyol method using Ag NO₃ as the silver source,EG as the reducing agent and as the solvent,KBr as the synthesis control agent,and PVP as the surface covering agent to control the anisotropic growth of Ag NWs.Compared with the conventional polyol method,Ag Cl was added for the initial nucleation of Ag NWs.Ag Cl was used as the initial silver nucleus for the adsorption of Ag atoms for one-dimensional growth by generating silver nanoparticles under the reducing effect of acetaldehyde,and silver nanowires withθ:80-100 nm,L:20-40μm were successfully prepared with an aspect ratio of about 600.（3）Firstly,Ag NWs was spin-coated on the glass substrate,and ITO was deposited on the Ag NWs surface by magnetron sputtering coater under low temperature conditions to form Ag NWs/ITO composite film with fine crystal structure.Compared with the single ITO film,it has higher electrical conductivity with a square resistance of 30.3Ω/□and an average visible light transmittance of 81.04%.Compared with the single silver nanowire film,the problems of high surface roughness,low chemical stability and space filling are solved.