Preparation Of Thioantimonide By Pulse Electrodeposition And Its Application In Battery

Antimony sulfide（Sb₂S₃）is a simple binary compound material with adjustable band gap,high optical absorption coefficient,single phase,environmentally friendly,and simple preparation process.In this thesis,a new pulsed electrodeposition method and post-vulcanization annealing method are used to prepare high performance antimony sulfide solar cells.The preparation process,defect recombination,preferred orientation,phase composition and other aspects are studied.The main research contents include the following aspects:In this thesis,Sb metal preform layer was prepared by pulse electrodeposition,and then the preform layer was placed in a tubular furnace to prepare Sb₂S₃thin film by two-step annealing method.Sb₂S₃thin film with uniform composition and high crystallinity is very important for improving device performance.Firstly,the effects of various curing conditions on the properties of Sb₂S₃thin films were systematically studied.The effects of heating rate,sulfur source temperature and curing temperature on the structure,morphology and device properties of Sb₂S₃thin films were studied.It is found that the Sb₂S₃thin film prepared by two-step annealing process with a heating rate of 10℃/min,a sulfur source temperature of 300℃in the first step,a substrate temperature of 360℃in the second step,and an annealing time of 20 min has good performance,and the Sb₂S₃thin film solar cell is further prepared.At this time,the open circuit voltage of the device is 484m V,the short circuit current is 7.61m A/cm²,the filling factor is 45.85%,and the photoelectric conversion efficiency is 1.83%.In addition,the influence of different deposition charges on the structure and device performance of Sb₂S₃thin film was studied.Because Sb₂S₃is a quasi-one-dimensional（Q1D）structure,Sb₂S₃thin film with（hk1）preferred orientation has been proved to effectively enhance carrier transport and inhibit carrier recombination,so controlling the growth orientation of Sb₂S₃thin film is an effective method to improve the short-circuit current density.It is found that the thickness of Sb₂S₃film increases and the（hk1）preferred orientation increases with the increasing of the deposition charge.The Sb₂S₃thin film solar cell prepared by using the Sb₂S₃thin film deposited at25C has obtained an open-circuit voltage of 628m V,a short-circuit current of14.1m A/cm²,a filling factor of 37.83%,and a photoelectric conversion efficiency of3.35%.In order to further explore the main factors limiting the efficiency improvement of Sb₂S₃devices with substrate structure,SCPAS software was used to simulate the Sb₂S₃thin film solar cells with different buffer layers.It is found that when Zn S is used as the buffer layer,the energy band dislocation of the absorption layer/buffer layer can be effectively reduced and the energy band bending can be caused,thus the filling factor has been significantly improved.To sum up,this thesis optimizes the process of Sb₂S₃thin film prepared by pulse electrodeposition and post-vulcanization process,effectively improves the photoelectric conversion efficiency of the device,and provides theoretical and technical support for further research and exploration of Sb₂S₃thin film solar cells with substrate structure.