| As an excellent semiconductor material,indium oxide has important applications in gas detection,transparent conductivity,solar cells,photoelectric detection and many other fields.Indium oxide has high visible light transmittance and wide band gap.In this paper,indium oxide（In2O3）,nitrogen（N）,europium（Eu）and silver（Ag）doped indium oxide based films were prepared by magnetron sputtering.The transmittance,band gap,photoluminescence and photoelectric detection properties of the films were studied to improve the photoluminescence and photoelectric detection performance of the films.The paper mainly includes the following five parts:The first chapter mainly introduces the structure and properties of indium oxide semiconductor,the reasons why N,Eu,Ag elements are selected to doped In2O3,the overview of photodetector research,and the research ideas and main research contents of this paper.In the second chapter,the preparation and characterization of indium oxide thin films are introduced.In the third chapter,the experimental process of preparing indium oxide thin films,as well as the measurement and analysis of film orientation,crystalline state,element composition and surface morphology are introduced.The results show that（222）-oriented and（440）-oriented indium oxide films have been obtained.Among them,the（222）preferred orientation In2O3:N film surface presents larger round particles,and the（440）preferred orientation In2O3:N film surface presents angular particles.It is found that the angular particles are composed of smaller round particles under the high magnification microscope.The N doping concentration of In2O3:N film is 1.77%～9.13%,the Eu doping concentration of In2O3:Eu film is 0.4%～9.3%,and the Ag doping concentration of In2O3:Ag film is 3%～8.5%.The fourth chapter is mainly divided into two parts.The first part regulates the band gap width of indium oxide based films.In this paper,the band gap width of indium oxide based films is 2.72 e V～3.87 e V.Silver doping can effectively reduce the band gap of the film,but it will reduce the visible light transmittance of the film,while europium doping can effectively increase the band gap of the film.The second part analyzes the photoelectric properties of the films,including resistivity,photocatalysis,photoluminescence and photoelectric detection properties.The resistivity is mainly affected by the oxygen vacancy of the film,and the photocatalytic performance is mainly affected by the film orientation.The（440）crystal plane ratio（222）crystal plane is conducive to the photocatalytic water decomposition,and the photoluminescence performance is affected by the doping concentration of europium and whether it is annealed.The photoelectric detection performance is closely related to the doped elements,and nitrogen doping can increase the conductivity of the film and respond to the 365 nm light source.Compared with nitrogen doping,europium doping can improve the light-dark current ratio and response time of the film.After silver doping,the light response range of the film increases and the response time decreases,but the light-dark current ratio decreases.In2O3:Ag film also absorbs 532 nm light source,which is due to the plasmon effect of the film caused by silver doping.The fifth chapter summarizes and prospects the research contents of this paper. |
