Because rare earth ions have rich energy level structures and unique f-layer electrons that can leap to emit different colors of light,rare earth doped phosphors are excellent visible light materials.In addition to visible light materials,near-infrared materials also have a wide range of applications in production life.The research on near-infrared materials mainly focuses on transition metal ions,among which Cr3+has a low energy at 3d energy level,so it generally has strong emission in the near-infrared region.Single substrate doped phosphors have a better prospect in achieving broadband emission and tunable emission because of their simple synthesis process and cheap price.In this paper,a variety of broadband luminescent materials with a single matrix singly or co-doped with rare earth ions or transition metal ions are presented,and in the preparation of these phosphors,the synthesis methods are high-temperature solid-phase methods.These phosphors include Eu3+/Bi3+activated Ca Sr Ga4O8,Eu3+/Eu2+/Ce3+activated K3YSi2O7,Cr3+doped phosphors withβ-Ga2O3 as the main matrix,and Eu2+/Eu3+co-doped Li4Ca2B8O16.XRD,diffuse reflectance spectroscopy,photoluminescence emission and excitation spectroscopy were used to characterize these samples.1.A variety of Eu3+,Bi3+and co-doped Ca Sr Ga4O8 phosphors were prepared by high-temperature solid-state reaction.Luminescence properties of samples were characterized by a photoluminescence instrument.Under 393 nm excitation,Ca Sr Ga4O8:Eu3+phosphor exhibits comparative stronger 5D0→7F2(618 nm)red emission and abnormal intensity 5D0→7F4(702nm)emission.The refractive index of the Ca Sr Ga4O8 is estimated to be 1.731.The intensity of the 5D0→7F2(618 nm)and 5D0→7F4(702 nm)transition peaks in the emission spectra were analyzed by Judd-Ofelt theory.The intensity parameterΩ2 of Ca Sr Ga4O8:4%Eu3+is 5.0(10-20cm2),andΩ4 is 4.5(10-20cm2).For the Ca Sr Ga4O8:Bi3+phosphor,the emission peak at 450 nm is displayed under excitation at 320 nm.The photoluminescence and fluorescence lifetime decay curves of Ca Sr Ga4O8:0.5%Eu3+,y%Bi3+(y=1.5-4.5)demonstrate the energy transfer from Bi3+to Eu3+.For the co-doped system,changing the concentration of Bi3+can achieve a color change from yellow to blue.2.Eu3+,Eu2+and Ce3+doped K3YSi2O7 phosphors are synthesized under reducing atmosphere.Photoluminescence properties show K3YSi2O7:1%Ce,1%Eu at 330 nm excitation(FWHM=211 nm,where FWHM stands for the full width at half maximum)can produce broadband emission,its light-emitting area covers the entire visible region.The preferential occupation sites of Ce and Eu ions in K3YSi2O7 are calculated using the bond energy theory.Eu2+,Eu3+,Ce3+ions preferentially occupy K3,Y2,K1 sites,respectively.The broadband emission of the phosphor is caused by the dopant ions’selective site occupancy.3.A series of Cr3+-doped luminescent materials withβ-Ga2O3 as the main substrate at different temperatures were prepared by high-temperature solid-state method.The Ga2O3:Cr synthesized at 700°C can achieve a peculiar broadband double-centered emission from 350 to800 nm.Upon increasing the synthesis temperature,Ga2O3:Cr exhibits broadband emission mainly in the near-infrared region.The photoluminescence(PL)spectra of Ga2O3:0.3%Cr at260 nm excitation showed a blue shift from 770 to 730 nm with increasing synthesis temperature(700,900,1000°C).Tuning of Ga2O3:Cr spectra was achieved by replacing Ga3+with In3+through main group element substitution,but replacing Ga3+with Al3+did not achieve tuning of Ga2O3:Cr spectra.4.A series of Eu2+/Eu3+co-doped Li4Ca2B8O16 phosphors were synthesized using a high-temperature solid-state method under air and reducing atmospheres,respectively.The photoluminescence emission spectra and excitation spectra were used to verify the"self-reduction"phenomenon of Eu3+to Eu2+conversion in Li4Ca2B8O16.The lattice site occupation and the"self-reduction"behavior of the doped ions were analyzed by using the bond energy method.For Li4Ca2B8O16:10Eu synthesized under reducing atmosphere,the chromaticity coordinates at 365 nm excitation are(0.3346,0.3107),which is located in the white region,and therefore its application value exists in the WLED. |