Interface Modulation And Performance Optimization Of Perovskite Solar Cells: Role Of Antimonene-quantum-sheet Anode Passivation Layer

The use of hole transport layer is crucial to improve the efficiency and stability of perovskite solar cells（PSCs）.Currently,Spiro-OMe TAD is the most commonly used and efficient hole material in classical n-i-p type PSCs.However,there are still many problems to be solved,such as poor stability of Spiro-OMe TAD,to the tendency of Spiro-OMe TAD to have adverse reactions or ion diffusion with perovskite layer,resulting in the degradation of the perovskite layer,as well as the high defect density and incompatibility at the interface between Spiro-OMe TAD and perovskite layer.The anode interface passivation engineering can effectively improve the above problems,and this strategy has become a research hotspot in this field.In terms of passivation material selection,two-dimensional antimony quantum sheets（AMQSs）show great potential for application in anode interface passivation engineering due toits atomic thickness,high carrier mobility,adjustable energy level structure,easy functionalization surface,low-temperature solution processing,and many other advantages.Herein,this paper mainly studies the effect of AMQSs based anode interface passivation layer on the performance of PSCs.Firstly,the classical n-i-p PSCs with the device structure of FTO/c-Ti O₂/m-Ti O₂/Perovskite/Spiro-OMe TAD/Ag are used as the reference device,and the preparation process of each functional layer is optimized.The results indicate that the electron transport layer prepared by spin coating method has a higher transmittance and a more uniform and compact surface morphology.Moreover,when the film component is FAPb I₃,and the power conversion efficiency（PCE）of the optimal reference device is 9.75%,and the optimal spin coating speeds of compact layer and mesoporous layer are 4000 rpm and 3000 rpm,respectively.Secondly,the effects of doping MABr and Pb Br₂,annealing temperature,and different polarity of antisolvents on the photovoltaic performance of perovskite active layer are investigated.The results show that when the component ratio of the perovskite film is FA_0.85MA_0.15Pb₁(I_0.85Br_0.15)₃,the annealing temperature is 100℃,and the antisolvent is isopropanol,the grain size of the perovskite thin film increased,and the device efficiency increases from 9.75%to 12.45%.Finally,AMQSs is dispersed in the antisolvent isopropanol as an anode interface passivating layer at the interface between perovskite layer and hole transport layer to optimize the performance of PSC,which utilizing the excellent bipolar dispersion characteristics and excellent hole transport performance of AMQSs.When the concentration of AMQSs is 5 mg/L,the PCE of the device increases from 12.35%to 14.56%.